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NSBC114EDXV6T1G PDF预览

NSBC114EDXV6T1G

更新时间： 2024-01-04 05:52:49
品牌 Logo 应用领域
安森美 - ONSEMI 晶体晶体管
页数 文件大小 规格书
9页 82K
描述
Dual Bias Resistor Transistors

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中文翻译

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NSBC114EDXV6T1G 技术参数

是否无铅： 不含铅生命周期：Active
包装说明：SMALL OUTLINE, R-PDSO-F6针数：6
Reach Compliance Code：compliantECCN代码：EAR99
风险等级：0.87其他特性：BUILT IN BIAS RESISTOR RATIO IS 1
最大集电极电流 (IC)：0.1 A集电极-发射极最大电压：50 V
配置：SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR最小直流电流增益 (hFE)：35
JESD-30 代码：R-PDSO-F6JESD-609代码：e3
湿度敏感等级：1元件数量：2
端子数量：6最高工作温度：150 °C
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE峰值回流温度（摄氏度）：260
极性/信道类型：NPN最大功率耗散 (Abs)：0.5 W
认证状态：Not Qualified子类别：BIP General Purpose Small Signal
表面贴装：YES端子面层：Tin (Sn)
端子形式：FLAT端子位置：DUAL
处于峰值回流温度下的最长时间：40晶体管应用：SWITCHING
晶体管元件材料：SILICONBase Number Matches：1

NSBC114EDXV6T1G 数据手册

 浏览型号NSBC114EDXV6T1G的Datasheet PDF文件第2页浏览型号NSBC114EDXV6T1G的Datasheet PDF文件第3页浏览型号NSBC114EDXV6T1G的Datasheet PDF文件第4页浏览型号NSBC114EDXV6T1G的Datasheet PDF文件第5页浏览型号NSBC114EDXV6T1G的Datasheet PDF文件第6页浏览型号NSBC114EDXV6T1G的Datasheet PDF文件第7页 
NSBC114EDXV6T1,  
NSBC114EDXV6T5  
Preferred Devices  
Dual Bias Resistor  
Transistors  
NPN Silicon Surface Mount Transistors  
with Monolithic Bias Resistor Network  
http://onsemi.com  
The BRT (Bias Resistor Transistor) contains a single transistor with  
a monolithic bias network consisting of two resistors; a series base  
resistor and a base−emitter resistor. These digital transistors are  
designed to replace a single device and its external resistor bias  
network. The BRT eliminates these individual components by  
integrating them into a single device. In the NSBC114EDXV6T1  
series, two BRT devices are housed in the SOT−563 package which is  
ideal for low power surface mount applications where board space is at  
a premium.  
(3)  
Q
(2)  
(1)  
R
R
2
1
1
Q
2
R
2
R
1
(4)  
(5)  
(6)  
NSBC114EDXV6T1  
Features  
• Simplifies Circuit Design  
• Reduces Board Space  
• Reduces Component Count  
• Lead−Free Solder Plating  
• These are Pb−Free Devices  
MARKING  
DIAGRAM  
SOT−563  
CASE 463A  
PLASTIC  
xx M G  
MAXIMUM RATINGS  
(T = 25°C unless otherwise noted, common for Q and Q )  
A
1
1
1
2
Rating  
Symbol  
Value  
Unit  
Vdc  
Collector-Base Voltage  
V
50  
50  
xx = Device Code (Refer to Page 2)  
CBO  
M
= Date Code  
Collector-Emitter Voltage  
Collector Current  
V
Vdc  
CEO  
G
= Pb−Free Package  
I
100  
mAdc  
C
THERMAL CHARACTERISTICS  
ORDERING INFORMATION  
Characteristic  
(One Junction Heated)  
Symbol  
Max  
Unit  
†
Device  
Package  
Shipping  
Total Device Dissipation; T = 25°C  
P
357 (Note 1)  
2.9 (Note 1)  
mW  
mW/°C  
A
D
NSBC1xxxDXV6T1 SOT−563* 4000/Tape & Reel  
NSBC1xxxDXV6T1G SOT−563* 4000/Tape & Reel  
NSBC1xxxDXV6T5 SOT−563* 8000/Tape & Reel  
NSBC1xxxDXV6T5G SOT−563* 8000/Tape & Reel  
Derate above 25°C  
Thermal Resistance, Junction-to-Ambient  
R
q
350 (Note 1)  
°C/W  
JA  
Characteristic  
(Both Junctions Heated)  
Symbol  
Max  
Unit  
Total Device Dissipation; T = 25°C  
P
500 (Note 1)  
4.0 (Note 1)  
mW  
mW/°C  
A
D
Derate above 25°C  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specifications  
Brochure, BRD8011/D.  
Thermal Resistance, Junction-to-Ambient  
R
q
250 (Note 1)  
−55 to +150  
°C/W  
°C  
JA  
Junction and Storage Temperature  
Range  
T , T  
J stg  
*This package is inherently Pb−Free.  
1. FR−4 @ Minimum Pad  
DEVICE MARKING INFORMATION  
See specific marking information in the device marking table  
on page 2 of this data sheet.  
Preferred devices are recommended choices for future use  
and best overall value.  
©
Semiconductor Components Industries, LLC, 2006  
1
Publication Order Number:  
May, 2006 − Rev. 6  
NSBC114EDXV6/D  
 
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中文翻译

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NSBC114EDXV6T1G 替代型号

型号 品牌 替代类型 描述 数据表
NSBC114YPDXV6T1G ONSEMI

类似代替

 Dual Bias Resistor Transistors
NSBC114YDXV6T1G ONSEMI

类似代替

 Dual NPN Bias Resistor Transistors
NSBC114EPDXV6T1G ONSEMI

类似代替

 Dual Bias Resistor Transistors

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