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NSBC143TPDXV6T5 PDF预览

NSBC143TPDXV6T5

更新时间： 2024-09-26 21:18:03
品牌 Logo 应用领域
安森美 - ONSEMI 开关光电二极管晶体管
页数 文件大小 规格书
10页 93K
描述
100mA, 50V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR, PLASTIC, CASE 463A-01, 6 PIN

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NSBC143TPDXV6T5 技术参数

是否Rohs认证： 符合生命周期：Obsolete
包装说明：PLASTIC, CASE 463A-01, 6 PIN针数：6
Reach Compliance Code：compliantECCN代码：EAR99
风险等级：5.44其他特性：BUILT IN BIAS RESISTOR
最大集电极电流 (IC)：0.1 A集电极-发射极最大电压：50 V
配置：SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR最小直流电流增益 (hFE)：160
JESD-30 代码：R-PDSO-F6JESD-609代码：e3
湿度敏感等级：1元件数量：2
端子数量：6封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
峰值回流温度（摄氏度）：260极性/信道类型：NPN AND PNP
最大功率耗散 (Abs)：0.5 W认证状态：Not Qualified
子类别：BIP General Purpose Small Signal表面贴装：YES
端子面层：Tin (Sn)端子形式：FLAT
端子位置：DUAL处于峰值回流温度下的最长时间：40
晶体管应用：SWITCHING晶体管元件材料：SILICON
Base Number Matches：1

NSBC143TPDXV6T5 数据手册

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NSBC114EDXV6T1,  
NSBC114EDXV6T5  
Preferred Devices  
Dual Bias Resistor  
Transistors  
NPN Silicon Surface Mount Transistors  
with Monolithic Bias Resistor Network  
http://onsemi.com  
(3)  
(2)  
(1)  
The BRT (Bias Resistor Transistor) contains a single transistor with  
a monolithic bias network consisting of two resistors; a series base  
resistor and a base−emitter resistor. These digital transistors are  
designed to replace a single device and its external resistor bias  
network. The BRT eliminates these individual components by  
integrating them into a single device. In the NSBC114EDXV6T1  
series, two BRT devices are housed in the SOT−563 package which is  
ideal for low power surface mount applications where board space is at  
a premium.  
R
R
1
2
Q
1
Q
2
R
2
R
1
(4)  
(5)  
(6)  
NSBC114EDXV6T1  
• Simplifies Circuit Design  
• Reduces Board Space  
• Reduces Component Count  
• Lead−Free Solder Plating  
4
5
6
3
2
1
MAXIMUM RATINGS  
(T = 25°C unless otherwise noted, common for Q and Q )  
A
SOT−563  
CASE 463A  
PLASTIC  
1
2
Rating  
Symbol  
Value  
Unit  
Vdc  
Collector-Base Voltage  
Collector-Emitter Voltage  
Collector Current  
V
50  
50  
CBO  
CEO  
V
Vdc  
MARKING DIAGRAM  
I
C
100  
mAdc  
THERMAL CHARACTERISTICS  
xx D  
Characteristic  
(One Junction Heated)  
Symbol  
Max  
Unit  
xx = Specific Device Code  
Total Device Dissipation  
P
D
(see table on following page)  
= Date Code  
T = 25°C  
Derate above 25°C  
357 (Note 1)  
2.9 (Note 1)  
mW  
mW/°C  
A
D
Thermal Resistance −  
Junction-to-Ambient  
R
350 (Note 1)  
°C/W  
q
JA  
ORDERING INFORMATION  
Characteristic  
Device  
Package  
Shipping  
(Both Junctions Heated)  
Symbol  
Max  
Unit  
NSBC114EDXV6T1 SOT−563  
4 mm pitch  
4000/Tape & Reel  
Total Device Dissipation  
P
D
T = 25°C  
500 (Note 1)  
4.0 (Note 1)  
mW  
mW/°C  
A
NSBC114EDXV6T5 SOT−563  
2 mm pitch  
Derate above 25°C  
8000/Tape & Reel  
Thermal Resistance −  
Junction-to-Ambient  
R
250 (Note 1)  
°C/W  
°C  
q
JA  
DEVICE MARKING INFORMATION  
Junction and Storage  
Temperature Range  
T , T  
J stg  
−55 to +150  
See specific marking information in the device marking table  
on page 2 of this data sheet.  
1. FR−4 @ Minimum Pad  
Preferred devices are recommended choices for future use  
and best overall value.  
Semiconductor Components Industries, LLC, 2004  
1
Publication Order Number:  
January, 2004 − Rev. 4  
NSBC114EDXV6/D  
 
1234567...10

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