Datasheet > NSBC143ZPDP6

NSBC143ZPDP6

更新时间： 2024-11-16 01:11:03

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
10页	101K
描述
Complementary Bias Resistor Transistors

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

NSBC143ZPDP6 数据手册

MUN5333DW1,

NSBC143ZPDXV6,

NSBC143ZPDP6

Complementary Bias

Resistor Transistors

R1 = 4.7 kW, R2 = 47 kW

NPN and PNP Transistors with Monolithic

Bias Resistor Network

www.onsemi.com

PIN CONNECTIONS

(2)

(3)

(1)

This series of digital transistors is designed to replace a single

device and its external resistor bias network. The Bias Resistor

Transistor (BRT) contains a single transistor with a monolithic bias

network consisting of two resistors; a series base resistor and a

base-emitter resistor. The BRT eliminates these individual

components by integrating them into a single device. The use of a BRT

can reduce both system cost and board space.

Features

(4)

(5)

(6)

• Simplifies Circuit Design

• Reduces Board Space

• Reduces Component Count

MARKING DIAGRAMS

• S and NSV Prefix for Automotive and Other Applications

Requiring Unique Site and Control Change Requirements;

AEC-Q101 Qualified and PPAP Capable*

SOT−363

CASE 419B

33 M G

• These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS

Compliant

MAXIMUM RATINGS

(T = 25°C both polarities Q (PNP) & Q (NPN), unless otherwise noted)

SOT−563

CASE 463A

33 M G

Rating

Symbol

Max

Unit

Vdc

Collector-Base Voltage

Collector-Emitter Voltage

CBO

CEO

Vdc

Collector Current − Continuous

Input Forward Voltage

100

mAdc

Vdc

SOT−963

CASE 527AD

M G

IN(fwd)

Input Reverse Voltage

Vdc

IN(rev)

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

33/Y

Specific Device Code

Date Code*

Pb-Free Package

ORDERING INFORMATION

(Note: Microdot may be in either location)

†

Device

Package

Shipping

*Date Code orientation may vary depending up-

on manufacturing location.

MUN5333DW1T1G,

SOT−363

3,000/Tape & Reel

NSVMUN5333DW1T1G*

NSVMUN5333DW1T3G*

SOT−363

SOT−563

10,000/Tape & Reel

4,000/Tape & Reel

NSBC143ZPDXV6T1G

NSVBC143ZPDXV6T1G*

NSVBC143ZPDXV6T5G*

NSBC143ZPDP6T5G

SOT−563

SOT−963

8,000/Tape & Reel

†For information on tape and reel specifications, including part orientation and

tape sizes, please refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

Publication Order Number:

September, 2016 − Rev. 4

DTC143ZP/D

12 3 4 5 6 7...10

中文翻译

下载PDF

与NSBC143ZPDP6相关器件

型号	品牌	获取价格	描述	数据表
NSBC143ZPDP6T5G	ONSEMI	获取价格	Complementary Bias Resistor Transistors
NSBC143ZPDXV6	ONSEMI	获取价格	Complementary Bias Resistor Transistors
NSBC143ZPDXV6T1	ROCHESTER	获取价格	100mA, 50V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR, PLASTIC, CASE 463A-01, 6
NSBC143ZPDXV6T1G	ONSEMI	获取价格	Dual Bias Resistor Transistors
NSBC143ZPDXV6T5G	ONSEMI	获取价格	互补双极数字晶体管 (BRT)
NSBC144EDP6	ONSEMI	获取价格	Dual NPN Bias Resistor Transistors R1 = 47 K , R2 = 47 K
NSBC144EDP6T5G	ONSEMI	获取价格	Dual NPN Bias Resistor Transistors R1 = 47 K , R2 = 47 K
NSBC144EDXV6	ONSEMI	获取价格	Dual NPN Bias Resistor Transistors R1 = 47 K , R2 = 47 K
NSBC144EDXV6T1	ONSEMI	获取价格	Dual Bias Resistor Transistors
NSBC144EDXV6T1G	ONSEMI	获取价格	Dual NPN Bias Resistor Transistors R1 = 47 K , R2 = 47 K

与NSBC143ZPDP6相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

7
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

4
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

30
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

13

产品中心

服务支持

精选活动

关于我们

帮助中心

NSBC143ZPDP6

NSBC143ZPDP6 数据手册

与NSBC143ZPDP6相关器件

与NSBC143ZPDP6相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

NSBC143ZPDP6

NSBC143ZPDP6 数据手册

与NSBC143ZPDP6相关器件

与NSBC143ZPDP6相关文章

您还可以找

您在本页遇到什么问题？