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NSBC143ZPDXV6T1G PDF预览

NSBC143ZPDXV6T1G

更新时间： 2024-11-15 12:05:27
品牌 Logo 应用领域
安森美 - ONSEMI 晶体晶体管
页数 文件大小 规格书
15页 181K
描述
Dual Bias Resistor Transistors

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中文翻译

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NSBC143ZPDXV6T1G 数据手册

 浏览型号NSBC143ZPDXV6T1G的Datasheet PDF文件第2页浏览型号NSBC143ZPDXV6T1G的Datasheet PDF文件第3页浏览型号NSBC143ZPDXV6T1G的Datasheet PDF文件第4页浏览型号NSBC143ZPDXV6T1G的Datasheet PDF文件第5页浏览型号NSBC143ZPDXV6T1G的Datasheet PDF文件第6页浏览型号NSBC143ZPDXV6T1G的Datasheet PDF文件第7页 
NSBC114EPDXV6T1G,  
NSVBC114EPDXV6T1G Series  
Dual Bias Resistor  
Transistors  
NPN and PNP Silicon Surface Mount  
Transistors with Monolithic Bias  
Resistor Network  
http://onsemi.com  
The BRT (Bias Resistor Transistor) contains a single transistor with  
a monolithic bias network consisting of two resistors; a series base  
resistor and a base−emitter resistor. These digital transistors are  
designed to replace a single device and its external resistor bias  
network. The BRT eliminates these individual components by  
integrating them into a single device. In the NSBC114EPDXV6T1  
series, two complementary BRT devices are housed in the SOT−563  
package which is ideal for low power surface mount applications  
where board space is at a premium.  
SOT−563  
CASE 463A  
PLASTIC  
(3)  
(2)  
(1)  
R
1
R
2
Q
1
Q
Features  
2
R
• Simplifies Circuit Design  
• Reduces Board Space  
• Reduces Component Count  
• Available in 8 mm, 7 inch Tape and Reel  
• AEC−Q101 Qualified and PPAP Capable  
2
R
1
(4)  
(5)  
(6)  
MARKING DIAGRAM  
• NSV Prefix for Automotive and Other Applications Requiring  
Unique Site and Control Change Requirements  
• These are Pb−Free Devices*  
xx MG  
G
xx = Specific Device Code  
(see table on page 2)  
MAXIMUM RATINGS (T = 25°C unless otherwise noted, common for Q  
A
1
M
G
= Date Code  
= Pb−Free Package  
and Q , − minus sign for Q (PNP) omitted)  
2
1
Rating  
Symbol  
Value  
50  
Unit  
Vdc  
(Note: Microdot may be in either location)  
Collector-Base Voltage  
Collector-Emitter Voltage  
Collector Current  
V
CBO  
CEO  
ORDERING INFORMATION  
V
50  
Vdc  
†
Device  
Package  
Shipping  
I
C
100  
mAdc  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
NSBC114EPDXV6T1G SOT−563  
4 mm pitch  
4000/Tape & Reel  
NSBC114EPDXV6T5G SOT−563  
2 mm pitch  
8000/Tape & Reel  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specification  
Brochure, BRD8011/D.  
DEVICE MARKING INFORMATION  
See specific marking information in the device marking table  
on page 2 of this data sheet.  
*For additional information on our Pb−Free strategy and soldering details, please  
download the ON Semiconductor Soldering and Mounting Techniques  
Reference Manual, SOLDERRM/D.  
© Semiconductor Components Industries, LLC, 2012  
1
Publication Order Number:  
January, 2012 − Rev. 7  
NSBC114EPDXV6/D  
1234567...15

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NSBC143ZPDXV6T1G 替代型号

型号 品牌 替代类型 描述 数据表
NSBC114YPDXV6T1G ONSEMI

类似代替

 Dual Bias Resistor Transistors
NSBC114EPDXV6T1G ONSEMI

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 Dual Bias Resistor Transistors
NSBC114EDXV6T1G ONSEMI

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NSBC144EDXV6T5 ROCHESTER

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 		100mA, 50V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, LEAD FREE, PLASTIC, CASE 463A-01,
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