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NSBC143EF3T5G

更新时间： 2024-11-16 11:01:35

品牌	Logo	应用领域
安森美 - ONSEMI		小信号双极晶体管
页数	文件大小	规格书
10页	82K
描述
NPN Bipolar Digital Transistor (BRT)

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NSBC143EF3T5G 数据手册

DTC114EM3T5G Series

Digital Transistors (BRT)

NPN Silicon Surface Mount Transistors

with Monolithic Bias Resistor Network

This new series of digital transistors is designed to replace a single

device and its external resistor bias network. The digital transistor

contains a single transistor with a monolithic bias network consisting

of two resistors; a series base resistor and a base−emitter resistor. The

digital transistor eliminates these individual components by

integrating them into a single device. The use of a digital transistor can

reduce both system cost and board space. The device is housed in the

SOT−723 package which is designed for low power surface mount

applications.

http://onsemi.com

NPN SILICON DIGITAL

TRANSISTORS

PIN 3

COLLECTOR

(OUTPUT)

Features

PIN 1

BASE

(INPUT)

• Simplifies Circuit Design

• Reduces Board Space

• Reduces Component Count

PIN 2

EMITTER

(GROUND)

• The SOT−723 Package can be Soldered using Wave or Reflow.

• Available in 4 mm, 8000 Unit Tape & Reel

• These are Pb−Free Devices

MAXIMUM RATINGS (T = 25°C unless otherwise noted)

SOT−723

CASE 631AA

STYLE 1

Rating

Collector-Base Voltage

Collector-Emitter Voltage

Collector Current

Symbol

Value

Unit

Vdc

CBO

CEO

Vdc

100

mAdc

Maximum ratings are those values beyond which device damage can occur.

Maximum ratings applied to the device are individual stress limit values (not

normal operating conditions) and are not valid simultaneously. If these limits are

exceeded, device functional operation is not implied, damage may occur and

reliability may be affected.

MARKING DIAGRAM

xx = Specific Device Code

(See Marking Table on page 2)

M = Date Code

ORDERING INFORMATION

See detailed ordering and shipping information in the package

dimensions section on page 2 of this data sheet.

Semiconductor Components Industries, LLC, 2006

Publication Order Number:

March, 2006 − Rev. 3

DTC114EM3/D

12 3 4 5 6 7...10

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与NSBC143EF3T5G相关器件

型号	品牌	获取价格	描述	数据表
NSBC143EPDP6	ONSEMI	获取价格	Complementary Bias Resistor Transistors R1 = 4.7 k, R2 = 4.7 k
NSBC143EPDP6T5G	ONSEMI	获取价格	Complementary Bias Resistor Transistors R1 = 4.7 k, R2 = 4.7 k
NSBC143EPDXV6	ONSEMI	获取价格	Complementary Bias Resistor Transistors R1 = 4.7 k, R2 = 4.7 k
NSBC143EPDXV6T1	ROCHESTER	获取价格	100mA, 50V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR, PLASTIC, CASE 463A-01, 6
NSBC143EPDXV6T1G	ONSEMI	获取价格	Dual Bias Resistor Transistors
NSBC143TDXV6T1	ONSEMI	获取价格	Dual Bias Resistor Transistors
NSBC143TDXV6T1	ROCHESTER	获取价格	100mA, 50V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, LEAD FREE, PLASTIC, CASE 463A-01,
NSBC143TDXV6T5	ROCHESTER	获取价格	100mA, 50V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, LEAD FREE, PLASTIC, CASE 463A-01,
NSBC143TF3	ONSEMI	获取价格	NPN Transistors with Monolithic Bias Resistor Network
NSBC143TF3T5G	ONSEMI	获取价格	NPN Transistors with Monolithic Bias Resistor Network

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