Datasheet > NSBC124EPDXV6T1G

NSBC124EPDXV6T1G

更新时间： 2024-01-28 17:02:36

品牌	Logo	应用领域
安森美 - ONSEMI		晶体晶体管
页数	文件大小	规格书
10页	168K
描述
Complementary Bias Resistor Transistors R1 = 22 k, R2 = 22 k

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数据手册
替代型号

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NSBC124EPDXV6T1G 数据手册

MUN5312DW1,

NSBC124EPDXV6,

NSBC124EPDP6

Complementary Bias

Resistor Transistors

R1 = 22 kW, R2 = 22 kW

http://onsemi.com

PIN CONNECTIONS

(2)

NPN and PNP Transistors with Monolithic

Bias Resistor Network

(3)

(1)

This series of digital transistors is designed to replace a single

device and its external resistor bias network. The Bias Resistor

Transistor (BRT) contains a single transistor with a monolithic bias

network consisting of two resistors; a series base resistor and a

base-emitter resistor. The BRT eliminates these individual

components by integrating them into a single device. The use of a BRT

can reduce both system cost and board space.

Features

(4)

(5)

(6)

 Simplifies Circuit Design

 Reduces Board Space

 Reduces Component Count

MARKING DIAGRAMS

 S and NSV Prefix for Automotive and Other Applications

Requiring Unique Site and Control Change Requirements;

AEC-Q101 Qualified and PPAP Capable

SOT−363

CASE 419B

12 M G

 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS

Compliant

MAXIMUM RATINGS

(T = 25C both polarities Q (PNP) & Q (NPN), unless otherwise noted)

SOT−563

CASE 463A

12 M G

Rating

Symbol

Max

Unit

Vdc

Collector-Base Voltage

Collector-Emitter Voltage

CBO

CEO

Vdc

Collector Current − Continuous

Input Forward Voltage

100

mAdc

Vdc

SOT−963

CASE 527AD

M G

IN(fwd)

Input Reverse Voltage

Vdc

IN(rev)

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

12/R

Specific Device Code

Date Code*

Pb-Free Package

(Note: Microdot may be in either location)

ORDERING INFORMATION

*Date Code orientation may vary depending

upon manufacturing location.

†

Device

Package

Shipping

MUN5312DW1T1G,

SMUN5312DW1T1G

SOT−363

3,000/Tape & Reel

MUN5312DW1T2G

SOT−363

SOT−563

SOT−963

3,000/Tape & Reel

4,000/Tape & Reel

8,000/Tape & Reel

NSBC124EPDXV6T1G

NSBC124EPDXV6T5G

NSBC124EPDP6T5G

†For information on tape and reel specifications, including part orientation and

tape sizes, please refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

 Semiconductor Components Industries, LLC, 2012

Publication Order Number:

September, 2012 − Rev. 0

DTC124EP/D

12 3 4 5 6 7...10

中文翻译

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NSBC124EPDXV6T1G 替代型号

型号	品牌	替代类型	描述	数据表
NSBC124EPDXV6T5G	ONSEMI	类似代替	Complementary Bias Resistor Transistors R1 = 22 k, R2 = 22 k

与NSBC124EPDXV6T1G相关器件

型号	品牌	获取价格	描述	数据表
NSBC124EPDXV6T5G	ONSEMI	获取价格	Complementary Bias Resistor Transistors R1 = 22 k, R2 = 22 k
NSBC124XDXV6T1	ONSEMI	获取价格	Dual Bias Resistor Transistors
NSBC124XDXV6T1G	ONSEMI	获取价格	Dual Bias Resistor Transistors
NSBC124XF3	ONSEMI	获取价格	Digital Transistors (BRT)
NSBC124XF3T5G	ONSEMI	获取价格	Digital Transistors (BRT)
NSBC124XPDXV6T1G	ONSEMI	获取价格	Dual Bias Resistor Transistors
NSBC143EDP6	ONSEMI	获取价格	Dual NPN Bias Resistor Transistors
NSBC143EDP6T5G	ONSEMI	获取价格	Dual NPN Bipolar Digital Transistor (BRT)
NSBC143EDXV6	ONSEMI	获取价格	Dual NPN Bias Resistor Transistors
NSBC143EDXV6T1	ROCHESTER	获取价格	100mA, 50V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, LEAD FREE, PLASTIC, CASE 463A-01,

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