是否无铅: | 不含铅 | 生命周期: | Active |
包装说明: | SMALL OUTLINE, R-PDSO-F6 | 针数: | 6 |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
Factory Lead Time: | 8 weeks | 风险等级: | 5.77 |
其他特性: | BUILT IN BIAS RESISTANCE RATIO IS 1 | 最大集电极电流 (IC): | 0.1 A |
集电极-发射极最大电压: | 50 V | 配置: | SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR |
最小直流电流增益 (hFE): | 60 | JESD-30 代码: | R-PDSO-F6 |
JESD-609代码: | e3 | 湿度敏感等级: | 1 |
元件数量: | 2 | 端子数量: | 6 |
最高工作温度: | 150 °C | 最低工作温度: | -55 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | NPN AND PNP | 最大功率耗散 (Abs): | 0.408 W |
认证状态: | Not Qualified | 子类别: | BIP General Purpose Small Signal |
表面贴装: | YES | 端子面层: | Tin (Sn) |
端子形式: | FLAT | 端子位置: | DUAL |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 替代类型 | 描述 | 数据表 |
PEMD16 | NXP |
类似代替 ![]() |
NPN/PNP resistor-equipped transistors R1 = 22 kW, R2 = 47 kW |
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PUMD16,115 | NXP |
功能相似 ![]() |
PEMD16; PUMD16 - NPN/PNP resistor-equipped transistors; R1 = 22 k Ohm, R2 = 47 k Ohm TSSOP |
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型号 | 品牌 | 获取价格 | 描述 | 数据表 |
NSBC124EPDXV6 | ONSEMI |
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Complementary Bias Resistor Transistors R1 = 22 k, R2 = 22 k |
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NSBC124EPDXV6T1G | ONSEMI |
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Complementary Bias Resistor Transistors R1 = 22 k, R2 = 22 k |
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NSBC124EPDXV6T5G | ONSEMI |
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Complementary Bias Resistor Transistors R1 = 22 k, R2 = 22 k |
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NSBC124XDXV6T1 | ONSEMI |
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Dual Bias Resistor Transistors |
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NSBC124XDXV6T1G | ONSEMI |
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Dual Bias Resistor Transistors |
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NSBC124XF3 | ONSEMI |
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Digital Transistors (BRT) |
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NSBC124XF3T5G | ONSEMI |
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Digital Transistors (BRT) |
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NSBC124XPDXV6T1G | ONSEMI |
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Dual Bias Resistor Transistors |
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NSBC143EDP6 | ONSEMI |
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Dual NPN Bias Resistor Transistors |
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NSBC143EDP6T5G | ONSEMI |
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Dual NPN Bipolar Digital Transistor (BRT) |
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