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NSBC123TDP6T5G PDF预览

NSBC123TDP6T5G

更新时间： 2024-01-18 18:55:47
品牌 Logo 应用领域
安森美 - ONSEMI 开关光电二极管晶体管
页数 文件大小 规格书
5页 99K
描述
Dual NPN Bias Resistor Transistors

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中文翻译

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NSBC123TDP6T5G 技术参数

是否无铅： 不含铅生命周期：Active
包装说明：SMALL OUTLINE, R-PDSO-F6针数：6
Reach Compliance Code：compliantECCN代码：EAR99
Factory Lead Time：8 weeks风险等级：5.74
其他特性：BUILT IN BIAS RESISTOR最大集电极电流 (IC)：0.1 A
集电极-发射极最大电压：50 V配置：SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
最小直流电流增益 (hFE)：160JESD-30 代码：R-PDSO-F6
JESD-609代码：e3湿度敏感等级：1
元件数量：2端子数量：6
最高工作温度：150 °C封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
峰值回流温度（摄氏度）：NOT SPECIFIED极性/信道类型：NPN
最大功率耗散 (Abs)：0.408 W认证状态：Not Qualified
子类别：BIP General Purpose Small Signal表面贴装：YES
端子面层：Tin (Sn)端子形式：FLAT
端子位置：DUAL处于峰值回流温度下的最长时间：NOT SPECIFIED
晶体管应用：SWITCHING晶体管元件材料：SILICON
Base Number Matches：1

NSBC123TDP6T5G 数据手册

 浏览型号NSBC123TDP6T5G的Datasheet PDF文件第2页浏览型号NSBC123TDP6T5G的Datasheet PDF文件第3页浏览型号NSBC123TDP6T5G的Datasheet PDF文件第4页浏览型号NSBC123TDP6T5G的Datasheet PDF文件第5页 
NSBC123TDP6  
Dual NPN Bias Resistor  
Transistors  
R1 = 2.2 kW, R2 = 8 kW  
NPN Transistors with Monolithic Bias  
Resistor Network  
http://onsemi.com  
PIN CONNECTIONS  
(2)  
This series of digital transistors is designed to replace a single  
device and its external resistor bias network. The Bias Resistor  
Transistor (BRT) contains a single transistor with a monolithic bias  
network consisting of two resistors; a series base resistor and a  
base−emitter resistor. The BRT eliminates these individual  
components by integrating them into a single device. The use of a BRT  
can reduce both system cost and board space.  
(3)  
(1)  
R
1
R
2
Q
1
Q
2
Features  
R
2
• S and NSV Prefix for Automotive and Other Applications  
Requiring Unique Site and Control Change Requirements;  
AEC-Q101 Qualified and PPAP Capable  
R
1
(4)  
(5)  
(6)  
• Simplifies Circuit Design  
• Reduces Board Space  
• Reduces Component Count  
MARKING DIAGRAMS  
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS  
SOT−963  
CASE 527AD  
Compliant  
M G  
G
MAXIMUM RATINGS  
1
(T = 25°C, common for Q1 and Q2, unless otherwise noted)  
A
A
M
G
=
=
=
Specific Device Code  
Date Code*  
Pb−Free Package  
Rating  
Collector−Base Voltage  
Collector−Emitter Voltage  
Collector Current − Continuous  
Input Forward Voltage  
Symbol  
Max  
50  
Unit  
Vdc  
V
CBO  
V
CEO  
50  
Vdc  
(Note: Microdot may be in either location)  
*Date Code orientation may vary depending  
upon manufacturing location.  
I
C
100  
12  
mAdc  
Vdc  
V
IN(fwd)  
Input Reverse Voltage  
V
IN(rev)  
6
Vdc  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
ORDERING INFORMATION  
†
Device  
Package  
Shipping  
NSBC123TDP6T5G  
SOT−963  
8,000 / Tape & Reel  
†For information on tape and reel specifications, including part orientation and  
tape sizes, please refer to our Tape and Reel Packaging Specifications  
Brochure, BRD8011/D.  
© Semiconductor Components Industries, LLC, 2012  
1
Publication Order Number:  
September, 2012 − Rev. 0  
DTC123TD/D  
12345

中文翻译

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 		Digital Transistors (BRT) R1 = 2.2 k, R2 =  k
NSBC123TPDP6 ONSEMI

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 		Complementary Bias Resistor Transistors R1 = 2.2 k, R2 =  k
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 		Complementary Bias Resistor Transistors R1 = 2.2 k, R2 =  k
NSBC124EDP6 ONSEMI

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 		Dual NPN Bias Resistor Transistors R1 = 22 k, R2 = 22 k
NSBC124EDP6T5G ONSEMI

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 		Dual NPN Bias Resistor Transistors R1 = 22 k, R2 = 22 k
NSBC124EDXV6 ONSEMI

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 		Dual NPN Bias Resistor Transistors R1 = 22 k, R2 = 22 k
NSBC124EDXV6T1 ONSEMI

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 		Dual Bias Resistor Transistors
NSBC124EDXV6T1G ONSEMI

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 		Dual NPN Bias Resistor Transistors R1 = 22 k, R2 = 22 k
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 		Dual NPN Bias Resistor Transistors R1 = 22 k, R2 = 22 k
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 		Digital Transistors (BRT) R1 = 22 k, R2 = 22 k

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