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NSBC123JF3 PDF预览

NSBC123JF3

更新时间： 2024-01-06 12:33:55
品牌 Logo 应用领域
安森美 - ONSEMI 晶体数字晶体管
页数 文件大小 规格书
10页 130K
描述
Digital Transistors (BRT) R1 = 2.2 k, R2 = 47 k

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NSBC123JF3 数据手册

 浏览型号NSBC123JF3的Datasheet PDF文件第2页浏览型号NSBC123JF3的Datasheet PDF文件第3页浏览型号NSBC123JF3的Datasheet PDF文件第4页浏览型号NSBC123JF3的Datasheet PDF文件第5页浏览型号NSBC123JF3的Datasheet PDF文件第6页浏览型号NSBC123JF3的Datasheet PDF文件第7页 
MUN5235, DTC123JE,  
DTC123JM3, NSBC123JF3  
Digital Transistors (BRT)  
R1 = 2.2 kW, R2 = 47 kW  
NPN Transistors with Monolithic Bias  
Resistor Network  
http://onsemi.com  
PIN CONNECTIONS  
This series of digital transistors is designed to replace a single  
device and its external resistor bias network. The Bias Resistor  
Transistor (BRT) contains a single transistor with a monolithic bias  
network consisting of two resistors; a series base resistor and a  
base−emitter resistor. The BRT eliminates these individual  
components by integrating them into a single device. The use of a BRT  
can reduce both system cost and board space.  
PIN 3  
COLLECTOR  
(OUTPUT)  
PIN 1  
BASE  
(INPUT)  
R1  
R2  
PIN 2  
EMITTER  
(GROUND)  
Features  
• Simplifies Circuit Design  
• Reduces Board Space  
• Reduces Component Count  
MARKING DIAGRAMS  
• S and NSV Prefix for Automotive and Other Applications Requiring  
Unique Site and Control Change Requirements; AEC−Q101  
Qualified and PPAP Capable  
SC−70/SOT−323  
XX MG  
CASE 419  
STYLE 3  
G
1
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS  
SC−75  
CASE 463  
STYLE 1  
Compliant  
XX M  
XX M  
1
MAXIMUM RATINGS (T = 25°C)  
A
SOT−723  
CASE 631AA  
STYLE 1  
Rating  
Collector−Base Voltage  
Collector−Emitter Voltage  
Collector Current − Continuous  
Input Forward Voltage  
Symbol  
Max  
50  
Unit  
Vdc  
V
CBO  
CEO  
1
V
50  
Vdc  
SOT−1123  
CASE 524AA  
STYLE 1  
I
C
100  
12  
mAdc  
Vdc  
X M  
1
V
IN(fwd)  
Input Reverse Voltage  
V
IN(rev)  
5
Vdc  
XXX  
M
G
=
=
=
Specific Device Code  
Date Code*  
Pb−Free Package  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
(Note: Microdot may be in either location)  
*Date Code orientation may vary depending  
upon manufacturing location.  
ORDERING INFORMATION  
See detailed ordering, marking, and shipping information in  
the package dimensions section on page 2 of this data sheet.  
© Semiconductor Components Industries, LLC, 2012  
1
Publication Order Number:  
August, 2012 − Rev. 0  
DTC123J/D  
1234567...10

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