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NSBC114YDXV6T5

更新时间： 2024-11-09 21:18:55
品牌 Logo 应用领域
安森美 - ONSEMI 开关光电二极管晶体管
页数 文件大小 规格书
10页 93K
描述
100mA, 50V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, LEAD FREE, PLASTIC, CASE 463A-01, 6 PIN

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NSBC114YDXV6T5 技术参数

是否Rohs认证： 符合生命周期：Obsolete
包装说明：LEAD FREE, PLASTIC, CASE 463A-01, 6 PIN针数：6
Reach Compliance Code：unknownECCN代码：EAR99
风险等级：5.27其他特性：BUILT IN BIAS RESISTOR RATIO 4.7
最大集电极电流 (IC)：0.1 A集电极-发射极最大电压：50 V
配置：SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR最小直流电流增益 (hFE)：80
JESD-30 代码：R-PDSO-F6JESD-609代码：e3
湿度敏感等级：1元件数量：2
端子数量：6封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
峰值回流温度（摄氏度）：260极性/信道类型：NPN
最大功率耗散 (Abs)：0.5 W认证状态：Not Qualified
子类别：BIP General Purpose Small Signal表面贴装：YES
端子面层：Tin (Sn)端子形式：FLAT
端子位置：DUAL处于峰值回流温度下的最长时间：40
晶体管应用：SWITCHING晶体管元件材料：SILICON
Base Number Matches：1

NSBC114YDXV6T5 数据手册

 浏览型号NSBC114YDXV6T5的Datasheet PDF文件第2页浏览型号NSBC114YDXV6T5的Datasheet PDF文件第3页浏览型号NSBC114YDXV6T5的Datasheet PDF文件第4页浏览型号NSBC114YDXV6T5的Datasheet PDF文件第5页浏览型号NSBC114YDXV6T5的Datasheet PDF文件第6页浏览型号NSBC114YDXV6T5的Datasheet PDF文件第7页 
NSBC114EDXV6T1,  
NSBC114EDXV6T5  
Preferred Devices  
Dual Bias Resistor  
Transistors  
NPN Silicon Surface Mount Transistors  
with Monolithic Bias Resistor Network  
http://onsemi.com  
(3)  
(2)  
(1)  
The BRT (Bias Resistor Transistor) contains a single transistor with  
a monolithic bias network consisting of two resistors; a series base  
resistor and a base−emitter resistor. These digital transistors are  
designed to replace a single device and its external resistor bias  
network. The BRT eliminates these individual components by  
integrating them into a single device. In the NSBC114EDXV6T1  
series, two BRT devices are housed in the SOT−563 package which is  
ideal for low power surface mount applications where board space is at  
a premium.  
R
R
1
2
Q
1
Q
2
R
2
R
1
(4)  
(5)  
(6)  
NSBC114EDXV6T1  
• Simplifies Circuit Design  
• Reduces Board Space  
• Reduces Component Count  
• Lead−Free Solder Plating  
4
5
6
3
2
1
MAXIMUM RATINGS  
(T = 25°C unless otherwise noted, common for Q and Q )  
A
SOT−563  
CASE 463A  
PLASTIC  
1
2
Rating  
Symbol  
Value  
Unit  
Vdc  
Collector-Base Voltage  
Collector-Emitter Voltage  
Collector Current  
V
50  
50  
CBO  
CEO  
V
Vdc  
MARKING DIAGRAM  
I
C
100  
mAdc  
THERMAL CHARACTERISTICS  
xx D  
Characteristic  
(One Junction Heated)  
Symbol  
Max  
Unit  
xx = Specific Device Code  
Total Device Dissipation  
P
D
(see table on following page)  
= Date Code  
T = 25°C  
Derate above 25°C  
357 (Note 1)  
2.9 (Note 1)  
mW  
mW/°C  
A
D
Thermal Resistance −  
Junction-to-Ambient  
R
350 (Note 1)  
°C/W  
q
JA  
ORDERING INFORMATION  
Characteristic  
Device  
Package  
Shipping  
(Both Junctions Heated)  
Symbol  
Max  
Unit  
NSBC114EDXV6T1 SOT−563  
4 mm pitch  
4000/Tape & Reel  
Total Device Dissipation  
P
D
T = 25°C  
500 (Note 1)  
4.0 (Note 1)  
mW  
mW/°C  
A
NSBC114EDXV6T5 SOT−563  
2 mm pitch  
Derate above 25°C  
8000/Tape & Reel  
Thermal Resistance −  
Junction-to-Ambient  
R
250 (Note 1)  
°C/W  
°C  
q
JA  
DEVICE MARKING INFORMATION  
Junction and Storage  
Temperature Range  
T , T  
J stg  
−55 to +150  
See specific marking information in the device marking table  
on page 2 of this data sheet.  
1. FR−4 @ Minimum Pad  
Preferred devices are recommended choices for future use  
and best overall value.  
Semiconductor Components Industries, LLC, 2004  
1
Publication Order Number:  
January, 2004 − Rev. 4  
NSBC114EDXV6/D  
 
1234567...10

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