Datasheet > NSBC114YPDP6

NSBC114YPDP6

更新时间： 2024-11-26 12:19:03

品牌	Logo	应用领域
安森美 - ONSEMI		晶体晶体管
页数	文件大小	规格书
10页	147K
描述
Complementary Bias Resistor Transistors

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中文翻译

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数据手册

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NSBC114YPDP6 数据手册

MUN5314DW1,

NSBC114YPDXV6,

NSBC114YPDP6

Complementary Bias

Resistor Transistors

R1 = 10 kW, R2 = 47 kW

http://onsemi.com

PIN CONNECTIONS

(2)

NPN and PNP Transistors with Monolithic

Bias Resistor Network

(3)

(1)

This series of digital transistors is designed to replace a single

device and its external resistor bias network. The Bias Resistor

Transistor (BRT) contains a single transistor with a monolithic bias

network consisting of two resistors; a series base resistor and a

base-emitter resistor. The BRT eliminates these individual

components by integrating them into a single device. The use of a BRT

can reduce both system cost and board space.

Features

(4)

(5)

(6)

 Simplifies Circuit Design

 Reduces Board Space

 Reduces Component Count

 S and NSV Prefix for Automotive and Other Applications

Requiring Unique Site and Control Change Requirements;

AEC-Q101 Qualified and PPAP Capable

MARKING DIAGRAMS

SOT−363

CASE 419B

14 M G

 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS

Compliant

MAXIMUM RATINGS

SOT−563

CASE 463A

14 M G

(T = 25C both polarities Q (PNP) & Q (NPN), unless otherwise noted)

Rating

Symbol

Max

Unit

Vdc

Collector-Base Voltage

Collector-Emitter Voltage

CBO

CEO

Vdc

Collector Current − Continuous

Input Forward Voltage

100

mAdc

Vdc

SOT−963

CASE 527AD

M G

IN(fwd)

Input Reverse Voltage

Vdc

IN(rev)

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

14/Q

Specific Device Code

Date Code*

Pb-Free Package

(Note: Microdot may be in either location)

ORDERING INFORMATION

*Date Code orientation may vary depending

upon manufacturing location.

†

Device

Package

Shipping

MUN5314DW1T1G,

SMUN5314DW1T1G

SOT−363

3,000/Tape & Reel

NSBC114YPDXV6T1G

NSBC114YPDXV6T5G

NSBC114YPDP6T5G

SOT−563

SOT−963

4,000/Tape & Reel

8,000/Tape & Reel

†For information on tape and reel specifications, including part orientation and

tape sizes, please refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

 Semiconductor Components Industries, LLC, 2012

Publication Order Number:

September, 2012 − Rev. 0

DTC114YP/D

12 3 4 5 6 7...10

中文翻译

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与NSBC114YPDP6相关器件

型号	品牌	获取价格	描述	数据表
NSBC114YPDP6T5G	ONSEMI	获取价格	Complementary Bias Resistor Transistors
NSBC114YPDXV6	ONSEMI	获取价格	Complementary Bias Resistor Transistors
NSBC114YPDXV6T1	ROCHESTER	获取价格	100mA, 50V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR, PLASTIC, CASE 463A-01, 6
NSBC114YPDXV6T1	ONSEMI	获取价格	100mA, 50V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR, PLASTIC, CASE 463A-01, 6
NSBC114YPDXV6T1G	ONSEMI	获取价格	Dual Bias Resistor Transistors
NSBC114YPDXV6T5	ONSEMI	获取价格	100mA, 50V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR, PLASTIC, CASE 463A-01, 6
NSBC114YPDXV6T5G	ONSEMI	获取价格	Complementary Bias Resistor Transistors
NSBC115EDXV6T1	ONSEMI	获取价格	Dual Bias Resistor Transistors
NSBC115EDXV6T1	ROCHESTER	获取价格	100mA, 50V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, LEAD FREE, PLASTIC, CASE 463A-01,
NSBC115EDXV6T1G	ONSEMI	获取价格	Dual NPN Bipolar Digital Transistor (BRT)

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