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NSBC114YDP6T5G PDF预览

NSBC114YDP6T5G

更新时间： 2024-11-28 12:04:23
品牌 Logo 应用领域
安森美 - ONSEMI 晶体晶体管
页数 文件大小 规格书
8页 156K
描述
Dual NPN Bias Resistor Transistors

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中文翻译

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NSBC114YDP6T5G 技术参数

是否无铅： 不含铅生命周期：Active
包装说明：SMALL OUTLINE, R-PDSO-F6针数：6
Reach Compliance Code：compliantECCN代码：EAR99
风险等级：1.55其他特性：BUILT IN BIAS RESISTOR RATIO IS 4.7
最大集电极电流 (IC)：0.1 A集电极-发射极最大电压：50 V
配置：SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR最小直流电流增益 (hFE)：80
JESD-30 代码：R-PDSO-F6JESD-609代码：e3
湿度敏感等级：1元件数量：2
端子数量：6最高工作温度：150 °C
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE峰值回流温度（摄氏度）：NOT SPECIFIED
极性/信道类型：NPN最大功率耗散 (Abs)：0.408 W
认证状态：Not Qualified子类别：BIP General Purpose Small Signal
表面贴装：YES端子面层：Tin (Sn)
端子形式：FLAT端子位置：DUAL
处于峰值回流温度下的最长时间：NOT SPECIFIED晶体管应用：SWITCHING
晶体管元件材料：SILICONBase Number Matches：1

NSBC114YDP6T5G 数据手册

 浏览型号NSBC114YDP6T5G的Datasheet PDF文件第2页浏览型号NSBC114YDP6T5G的Datasheet PDF文件第3页浏览型号NSBC114YDP6T5G的Datasheet PDF文件第4页浏览型号NSBC114YDP6T5G的Datasheet PDF文件第5页浏览型号NSBC114YDP6T5G的Datasheet PDF文件第6页浏览型号NSBC114YDP6T5G的Datasheet PDF文件第7页 
MUN5214DW1,  
NSBC114YDXV6,  
NSBC114YDP6  
Dual NPN Bias Resistor  
Transistors  
R1 = 10 kW, R2 = 47 kW  
http://onsemi.com  
PIN CONNECTIONS  
(2)  
NPN Transistors with Monolithic Bias  
Resistor Network  
(3)  
(1)  
This series of digital transistors is designed to replace a single  
device and its external resistor bias network. The Bias Resistor  
Transistor (BRT) contains a single transistor with a monolithic bias  
network consisting of two resistors; a series base resistor and a  
base-emitter resistor. The BRT eliminates these individual  
components by integrating them into a single device. The use of a BRT  
can reduce both system cost and board space.  
R
1
R
2
Q
1
Q
2
R
2
R
1
Features  
(4)  
(5)  
(6)  
Simplifies Circuit Design  
Reduces Board Space  
Reduces Component Count  
MARKING DIAGRAMS  
S and NSV Prefix for Automotive and Other Applications  
Requiring Unique Site and Control Change Requirements;  
AEC-Q101 Qualified and PPAP Capable  
These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS  
Compliant  
6
SOT−363  
CASE 419B  
7D M G  
G
1
MAXIMUM RATINGS  
(T = 25C, common for Q and Q , unless otherwise noted)  
A
1
2
SOT−563  
CASE 463A  
1
7D M G  
Rating  
Symbol  
Max  
50  
Unit  
Vdc  
G
Collector-Base Voltage  
Collector-Emitter Voltage  
V
CBO  
V
CEO  
50  
Vdc  
Collector Current − Continuous  
Input Forward Voltage  
I
100  
40  
mAdc  
Vdc  
C
PMG  
SOT−963  
CASE 527AD  
G
V
IN(fwd)  
1
Input Reverse Voltage  
V
6
Vdc  
IN(rev)  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
7D/P  
M
G
=
=
=
Specific Device Code  
Date Code*  
Pb-Free Package  
(Note: Microdot may be in either location)  
ORDERING INFORMATION  
*Date Code orientation may vary depending  
upon manufacturing location.  
†
Device  
Package  
Shipping  
MUN5214DW1T1G,  
SMUN5214DW1T1G  
SOT−363  
3,000/Tape & Reel  
NSBC114YDXV6T1G  
NSVBC114YDXV6T1G  
SOT−563  
4,000/Tape & Reel  
NSBC114YDXV6T5G  
NSBC114YDP6T5G  
SOT−563  
SOT−963  
8,000/Tape & Reel  
8,000/Tape & Reel  
†For information on tape and reel specifications, including part orientation and  
tape sizes, please refer to our Tape and Reel Packaging Specifications  
Brochure, BRD8011/D.  
Semiconductor Components Industries, LLC, 2012  
1
Publication Order Number:  
September, 2012 − Rev. 0  
DTC114YD/D  
12345678

中文翻译

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NSBC114YDP6T5G 替代型号

型号 品牌 替代类型 描述 数据表
NSBC114YPDP6T5G ONSEMI

类似代替

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NSBC114EPDP6T5G ONSEMI

类似代替

 Dual Digital Transistors (BRT)
NSBC114EDP6T5G ONSEMI

类似代替

 Dual Digital Transistors (BRT)

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