Datasheet > NSBC114EPDP6

NSBC114EPDP6

更新时间： 2024-02-22 12:06:02

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
10页	99K
描述
Complementary Bias Resistor Transistors

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

NSBC114EPDP6 数据手册

MUN5311DW1,

NSBC114EPDXV6,

NSBC114EPDP6

Complementary Bias

Resistor Transistors

http://onsemi.com

PIN CONNECTIONS

(2)

R1 = 10 kW, R2 = 10 kW

NPN and PNP Transistors with Monolithic

Bias Resistor Network

(3)

(1)

This series of digital transistors is designed to replace a single

device and its external resistor bias network. The Bias Resistor

Transistor (BRT) contains a single transistor with a monolithic bias

network consisting of two resistors; a series base resistor and a

base-emitter resistor. The BRT eliminates these individual

components by integrating them into a single device. The use of a BRT

can reduce both system cost and board space.

Features

• Simplifies Circuit Design

• Reduces Board Space

• Reduces Component Count

• S and NSV Prefix for Automotive and Other Applications

Requiring Unique Site and Control Change Requirements;

AEC-Q101 Qualified and PPAP Capable*

(4)

(5)

(6)

MARKING DIAGRAMS

SOT−363

CASE 419B

• These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS

11 M G

Compliant

MAXIMUM RATINGS

(T = 25°C both polarities Q (PNP) & Q (NPN), unless otherwise noted)

Rating

Symbol

Max

Unit

Vdc

SOT−563

CASE 463A

11 M G

Collector-Base Voltage

Collector-Emitter Voltage

CBO

CEO

Vdc

Collector Current − Continuous

Input Forward Voltage

100

mAdc

Vdc

IN(fwd)

SOT−963

CASE 527AD

Input Reverse Voltage

Vdc

L M G

IN(rev)

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

11/L

Specific Device Code

Date Code*

Pb-Free Package

ORDERING INFORMATION

†

Device

Package

Shipping

MUN5311DW1T1G,

SMUN5311DW1T1G*

SOT−363

3,000/Tape & Reel

(Note: Microdot may be in either location)

*Date Code orientation may vary depending up-

on manufacturing location.

MUN5311DW1T2G,

SMUN5311DW1T2G*

SOT−363

3,000/Tape & Reel

SMUN5311DW1T3G

SOT−363

SOT−563

10,000/Tape & Reel

4,000/Tape & Reel

NSBC114EPDXV6T1G,

NSVBC114EPDXV6T1G*

NSBC114EPDXV6T5G

NSBC114EPDP6T5G

SOT−563

SOT−963

8,000/Tape & Reel

†For information on tape and reel specifications, including part orientation and

tape sizes, please refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

Publication Order Number:

May, 2014 − Rev. 2

DTC114EP/D

12 3 4 5 6 7...10

中文翻译

下载PDF

与NSBC114EPDP6相关器件

型号	品牌	获取价格	描述	数据表
NSBC114EPDP6T5G	ONSEMI	获取价格	Dual Digital Transistors (BRT)
NSBC114EPDXV6	ONSEMI	获取价格	Complementary Bias Resistor Transistors
NSBC114EPDXV6/D	ETC	获取价格	Dual Bias Resistor Transistor
NSBC114EPDXV6_04	ONSEMI	获取价格	Dual Bias Resistor Transistors
NSBC114EPDXV6T1	ONSEMI	获取价格	Dual Bias Resistor Transistors
NSBC114EPDXV6T1	ROCHESTER	获取价格	100mA, 50V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR, PLASTIC, CASE 463A-01, 6
NSBC114EPDXV6T1G	ONSEMI	获取价格	Dual Bias Resistor Transistors
NSBC114EPDXV6T5	ONSEMI	获取价格	Dual Bias Resistor Transistors
NSBC114EPDXV6T5G	ONSEMI	获取价格	Dual Bias Resistor Transistors
NSBC114TDP6T5G	ONSEMI	获取价格	Dual NPN Bias Resistor Transistors

与NSBC114EPDP6相关文章

BSS138LT3G：一款高效能N沟道MOSFET的全面解析
2024-07-04

4
解读EGP10B二极管资料手册：产品特性、参数分析
2024-07-04

4
RT9164AGG手册资料详解：引脚信息、设计指南
2024-07-04

4
2SA1037KPT资料详解：产品特性、电气参数、设计指南
2024-07-04

5

产品中心

服务支持

精选活动

关于我们

帮助中心

NSBC114EPDP6

NSBC114EPDP6 数据手册

与NSBC114EPDP6相关器件

与NSBC114EPDP6相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

NSBC114EPDP6

NSBC114EPDP6 数据手册

与NSBC114EPDP6相关器件

与NSBC114EPDP6相关文章

您还可以找

您在本页遇到什么问题？