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NSBC114TDXV6T1 PDF预览

NSBC114TDXV6T1

更新时间： 2024-02-04 10:00:07
品牌 Logo 应用领域
安森美 - ONSEMI 晶体晶体管
页数 文件大小 规格书
9页 130K
描述
Dual Bias Resistor Transistors

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NSBC114TDXV6T1 技术参数

是否无铅： 不含铅是否Rohs认证： 符合
生命周期：Active包装说明：LEAD FREE, PLASTIC, CASE 463A-01, 6 PIN
针数：6Reach Compliance Code：unknown
风险等级：5.33其他特性：BUILT IN BIAS RESISTOR
最大集电极电流 (IC)：0.1 A集电极-发射极最大电压：50 V
配置：SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR最小直流电流增益 (hFE)：160
JESD-30 代码：R-PDSO-F6JESD-609代码：e3
湿度敏感等级：NOT SPECIFIED元件数量：2
端子数量：6封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
峰值回流温度（摄氏度）：260极性/信道类型：NPN
认证状态：COMMERCIAL表面贴装：YES
端子面层：MATTE TIN端子形式：FLAT
端子位置：DUAL处于峰值回流温度下的最长时间：40
晶体管应用：SWITCHING晶体管元件材料：SILICON

NSBC114TDXV6T1 数据手册

 浏览型号NSBC114TDXV6T1的Datasheet PDF文件第2页浏览型号NSBC114TDXV6T1的Datasheet PDF文件第3页浏览型号NSBC114TDXV6T1的Datasheet PDF文件第4页浏览型号NSBC114TDXV6T1的Datasheet PDF文件第5页浏览型号NSBC114TDXV6T1的Datasheet PDF文件第6页浏览型号NSBC114TDXV6T1的Datasheet PDF文件第7页 
NSBC114EDXV6T1,  
NSBC114EDXV6T5  
Dual Bias Resistor  
Transistors  
NPN Silicon Surface Mount Transistors  
with Monolithic Bias Resistor Network  
http://onsemi.com  
(3)  
(2)  
(1)  
The BRT (Bias Resistor Transistor) contains a single transistor with  
a monolithic bias network consisting of two resistors; a series base  
resistor and a base−emitter resistor. These digital transistors are  
designed to replace a single device and its external resistor bias  
network. The BRT eliminates these individual components by  
integrating them into a single device. In the NSBC114EDXV6T1  
series, two BRT devices are housed in the SOT−563 package which is  
ideal for low power surface mount applications where board space is at  
a premium.  
R
R
1
2
Q
1
Q
2
R
2
R
1
(4)  
(5)  
(6)  
NSBC114EDXV6T1  
Features  
MARKING  
DIAGRAM  
• Simplifies Circuit Design  
• Reduces Board Space  
• Reduces Component Count  
• Lead−Free Solder Plating  
• These are Pb−Free Devices  
• NSV Prefix for Automotive and Other Applications Requiring  
Unique Site and Control Change Requirements; AEC−Q101  
Qualified and PPAP Capable  
SOT−563  
CASE 463A  
xx M G  
1
1
xx = Device Code (Refer to Page 2)  
M
G
= Date Code  
= Pb−Free Package  
MAXIMUM RATINGS  
(T = 25°C unless otherwise noted, common for Q and Q )  
A
ORDERING INFORMATION  
1
2
†
Device  
Package  
Shipping  
Rating  
Symbol  
Value  
Unit  
Vdc  
NSBC1xxxDXV6T1  
SOT−563 4000/Tape & Reel  
Collector-Base Voltage  
V
50  
50  
CBO  
CEO  
NSBC1xxxDXV6T1G SOT−563 4000/Tape & Reel  
NSVBC1xxxDXV6T1G SOT−563 4000/Tape & Reel  
Collector-Emitter Voltage  
Collector Current  
V
Vdc  
I
C
100  
mAdc  
THERMAL CHARACTERISTICS  
NSBC1xxxDXV6T5  
SOT−563 8000/Tape & Reel  
Characteristic  
(One Junction Heated)  
NSBC1xxxDXV6T5G SOT−563 8000/Tape & Reel  
Symbol  
Max  
Unit  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specifications  
Brochure, BRD8011/D.  
Total Device Dissipation; T = 25°C  
P
357 (Note 1)  
2.9 (Note 1)  
mW  
A
D
Derate above 25°C  
mW/°C  
Thermal Resistance, Junction-to-Ambient  
R
350 (Note 1)  
°C/W  
q
JA  
Characteristic  
(Both Junctions Heated)  
Symbol  
Max  
Unit  
DEVICE MARKING INFORMATION  
See specific marking information in the device marking table  
on page 2 of this data sheet.  
Total Device Dissipation; T = 25°C  
P
D
500 (Note 1)  
4.0 (Note 1)  
mW  
mW/°C  
A
Derate above 25°C  
Thermal Resistance, Junction-to-Ambient  
R
250 (Note 1)  
°C/W  
°C  
q
JA  
Junction and Storage Temperature  
Range  
T , T  
J
−55 to +150  
stg  
1. FR−4 @ Minimum Pad  
© Semiconductor Components Industries, LLC, 2012  
1
Publication Order Number:  
September, 2012 − Rev. 7  
NSBC114EDXV6/D  
 
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 		100mA, 50V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, LEAD FREE, PLASTIC, CASE 463A-01,

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