NE76000

更新时间： 2024-01-23 07:16:48

品牌	Logo	应用领域
日电电子 - NEC		晶体晶体管放大器
页数	文件大小	规格书
6页	55K
描述
LOW NOISE L TO Ku BAND GaAs MESFET

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NE76000 数据手册

LOW NOISE

L TO Ku BAND GaAs MESFET

NE76000

NOISE FIGURE & ASSOCIATED GAIN

FEATURES

vs. FREQUENCY

VDS = 3 V, IDS = 10 mA

•

LOW NOISE FIGURE

NF = 1.6 dB TYP at f = 12 GHz

3.5

•

HIGH ASSOCIATED GAIN

GA = 9 dB TYP at f = 12 GHz

2.5

•

LG = 0.3 µm, WG = 280 µm

ION IMPLANTATION

1.5

0.5

DESCRIPTION

TheNE76000providesalownoisefigureandhighassociated

gain through K-Band. The NE760 devices are fabricated by

ion implantation for improved RF and DC performance, reli-

ability, and uniformity. These devices feature a recessed 0.3

micron gate and triple epitaxial technology. The surface of the

device, except for bonding pads, is passivated with SiO2 and

Si3N4 for scratch protection as well as surface stability.

Frequency, f (GHz)

NEC's stringent quality assurance and test procedures en-

sure the highest reliability and performance.

ELECTRICAL SPECIFICATIONS (TA = 25°C)

PART NUMBER

PACKAGE OUTLINE

NE76000

00 (CHIP)

NE76000L

00 (CHIP)

SYMBOLS

PARAMETERS AND CONDITIONS

UNITS MIN TYP MAX MIN TYP MAX

NFOPT

Optimum Noise Figure at VDS = 3 V, IDS = 10 mA,

f = 4 GHz

f = 12 GHz

0.6

1.6

1.8

8.0

Associated Gain at VDS = 3 V, IDS = 10 mA,

f = 4 GHz

f = 12 GHz

13.0

9.0

8.0

P1dB

IDSS

Output Power at 1 dB Compression, VDS = 3 V, IDS = 30 mA, f = 12 GHz

Saturated Drain Current at VDS = 3 V, VGS = 0

Pinch-off Voltage at VDS = 3 V, IDS = 0.1 mA

Transconductance, VDS = 3 V, IDS = 10 mA

dBm

14.5

-3.0 -0.8 -0.5 -3.0 -0.8 -0.5

µA

30.0 40.0

1.0 10.0

190

30.0

1.0

IGSO

Gate to Source Leakage Current, VGS = -4 V

Thermal Resistance (Channel to Case)

RTH (CH-C)

°C/W

190

Notes:

1. RF performance is determined by packaging and testing 10 samples per wafer; wafer rejection criteria for standard devices is 2 rejects for 10

samples.

2. Chip mounted on infinite heat sink.

California Eastern Laboratories

12 3 4 5 6

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