NE76000L

更新时间： 2024-02-08 11:30:26

品牌	Logo	应用领域
日电电子 - NEC		晶体小信号场效应晶体管射频小信号场效应晶体管放大器
页数	文件大小	规格书
6页	55K
描述
LOW NOISE L TO Ku BAND GaAs MESFET

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中文翻译

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技术参数
数据手册

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NE76000L 技术参数

生命周期：	Obsolete	Reach Compliance Code：	unknown
风险等级：	5.84	Is Samacsys：	N
其他特性：	LOW NOISE, HIGH RELIABILITY	最小漏源击穿电压：	5 V
FET 技术：	METAL SEMICONDUCTOR	最高频带：	KU BAND
JESD-30 代码：	R-XUUC-N3	元件数量：	2
端子数量：	3	工作模式：	DEPLETION MODE
封装主体材料：	UNSPECIFIED	封装形状：	RECTANGULAR
封装形式：	UNCASED CHIP	极性/信道类型：	N-CHANNEL
最小功率增益 (Gp)：	8 dB	认证状态：	Not Qualified
表面贴装：	YES	端子形式：	NO LEAD
端子位置：	UPPER	晶体管元件材料：	GALLIUM ARSENIDE
Base Number Matches：	1

NE76000L 数据手册

LOW NOISE

L TO Ku BAND GaAs MESFET

NE76000

NOISE FIGURE & ASSOCIATED GAIN

FEATURES

vs. FREQUENCY

VDS = 3 V, IDS = 10 mA

•

LOW NOISE FIGURE

NF = 1.6 dB TYP at f = 12 GHz

3.5

•

HIGH ASSOCIATED GAIN

GA = 9 dB TYP at f = 12 GHz

2.5

•

LG = 0.3 µm, WG = 280 µm

ION IMPLANTATION

1.5

0.5

DESCRIPTION

TheNE76000providesalownoisefigureandhighassociated

gain through K-Band. The NE760 devices are fabricated by

ion implantation for improved RF and DC performance, reli-

ability, and uniformity. These devices feature a recessed 0.3

micron gate and triple epitaxial technology. The surface of the

device, except for bonding pads, is passivated with SiO2 and

Si3N4 for scratch protection as well as surface stability.

Frequency, f (GHz)

NEC's stringent quality assurance and test procedures en-

sure the highest reliability and performance.

ELECTRICAL SPECIFICATIONS (TA = 25°C)

PART NUMBER

PACKAGE OUTLINE

NE76000

00 (CHIP)

NE76000L

00 (CHIP)

SYMBOLS

PARAMETERS AND CONDITIONS

UNITS MIN TYP MAX MIN TYP MAX

NFOPT

Optimum Noise Figure at VDS = 3 V, IDS = 10 mA,

f = 4 GHz

f = 12 GHz

0.6

1.6

1.8

8.0

Associated Gain at VDS = 3 V, IDS = 10 mA,

f = 4 GHz

f = 12 GHz

13.0

9.0

8.0

P1dB

IDSS

Output Power at 1 dB Compression, VDS = 3 V, IDS = 30 mA, f = 12 GHz

Saturated Drain Current at VDS = 3 V, VGS = 0

Pinch-off Voltage at VDS = 3 V, IDS = 0.1 mA

Transconductance, VDS = 3 V, IDS = 10 mA

dBm

14.5

-3.0 -0.8 -0.5 -3.0 -0.8 -0.5

µA

30.0 40.0

1.0 10.0

190

30.0

1.0

IGSO

Gate to Source Leakage Current, VGS = -4 V

Thermal Resistance (Channel to Case)

RTH (CH-C)

°C/W

190

Notes:

1. RF performance is determined by packaging and testing 10 samples per wafer; wafer rejection criteria for standard devices is 2 rejects for 10

samples.

2. Chip mounted on infinite heat sink.

California Eastern Laboratories

12 3 4 5 6

中文翻译

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与NE76000L相关器件

型号	品牌	获取价格	描述	数据表
NE760084	ETC	获取价格
NE76038	CEL	获取价格	RF Small Signal Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel,
NE76038	NEC	获取价格	LOW NOISE L TO Ku-BAND GaAs MESFET
NE76038-T1	CEL	获取价格	RF Small Signal Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel,
NE76038-T1	NEC	获取价格	LOW NOISE L TO Ku-BAND GaAs MESFET
NE76038-T1A	RENESAS	获取价格	RF SMALL SIGNAL, FET
NE76038-T1A	NEC	获取价格	RF Small Signal Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, M
NE76038-T2	CEL	获取价格	RF Small Signal Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel,
NE76083A	CEL	获取价格	RF Small Signal Field-Effect Transistor, 1-Element, K Band, Gallium Arsenide, N-Channel, M
NE76083A	NEC	获取价格	RF Small Signal Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel,

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