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NE4210M01-T1 PDF预览

NE4210M01-T1

更新时间: 2024-01-02 18:06:04
品牌 Logo 应用领域
日电电子 - NEC 晶体放大器小信号场效应晶体管射频小信号场效应晶体管光电二极管
页数 文件大小 规格书
12页 80K
描述
C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET

NE4210M01-T1 技术参数

生命周期:Obsolete包装说明:SMALL OUTLINE, R-PDSO-G6
针数:6Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.21.00.95
风险等级:5.83其他特性:LOW NOISE
配置:SINGLE最小漏源击穿电压:3 V
最大漏极电流 (ID):0.02 AFET 技术:HETERO-JUNCTION
最高频带:KU BANDJESD-30 代码:R-PDSO-G6
元件数量:1端子数量:6
工作模式:DEPLETION MODE封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
极性/信道类型:N-CHANNEL最小功率增益 (Gp):9 dB
认证状态:Not Qualified表面贴装:YES
端子形式:GULL WING端子位置:DUAL
晶体管应用:AMPLIFIER晶体管元件材料:SILICON

NE4210M01-T1 数据手册

 浏览型号NE4210M01-T1的Datasheet PDF文件第2页浏览型号NE4210M01-T1的Datasheet PDF文件第3页浏览型号NE4210M01-T1的Datasheet PDF文件第4页浏览型号NE4210M01-T1的Datasheet PDF文件第5页浏览型号NE4210M01-T1的Datasheet PDF文件第6页浏览型号NE4210M01-T1的Datasheet PDF文件第7页 
PRELIMINARY DATA SHEET  
HETERO JUNCTION FIELD EFFECT TRANSISTOR  
NE4210M01  
C to Ku BAND SUPER LOW NOISE AMPLIFIER  
N-CHANNEL HJ-FET  
DESCRIPTION  
The NE4210M01 is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its  
excellent low noise and high associated gain make it suitable for DBS, TVRO and another commercial systems.  
FEATURES  
Super Low Noise Figure & High Associated Gain  
NF = 0.8 dB TYP., Ga = 11 dB TYP. at f = 12 GHz  
6pin super minimold package  
Gate Width: Wg = 200µm  
ORDERING INFORMATION  
Part Number  
Package  
6-pin super minimold  
Supplying Form  
Marking  
NE4210M01-T1  
Embossed tape 8 mm wide.  
1, 2, 3 pins face to perforation  
side of the tape  
V73  
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)  
Parameter  
Drain to Source Voltage  
Gate to Source Voltage  
Drain Current  
Symbol  
VDS  
VGS  
ID  
Ratings  
Unit  
V
4.0  
3.0  
V
IDSS  
mA  
µA  
mW  
°C  
°C  
Gate Current  
IG  
100  
Total Power Dissipation  
Channel Temperature  
Storage Temperature  
Ptot  
125  
Tch  
125  
Tstg  
65 to +125  
The information in this document is subject to change without notice.  
Document No. P13682EJ1V0DS00 (1st edition)  
Date Published August 1998 N CP(K)  
Printed in Japan  
©
1998  

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