Datasheet > NE425S01_98

NE425S01_98

更新时间： 2024-01-22 02:39:36

品牌	Logo	应用领域
日电电子 - NEC		放大器
页数	文件大小	规格书
5页	51K
描述
C to KU BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

NE425S01_98 数据手册

PRELIMINARY DATA SHEET

C to KU BAND SUPER LOW

NOISE AMPLIFIER N-CHANNEL HJ-FET

NE425S01

NOISE FIGURE & ASSOCIATED

GAIN vs. FREQUENCY

FEATURES

• SUPER LOW NOISE FIGURE:

0.60 dB TYP at 12 GHz

VDS = 2 V

ID = 10 mA

• HIGH ASSOCIATED GAIN:

12.0 dB TYP at f = 12 GHz

• GATE LENGTH: ≤ 0.20 µm

• GATE WIDTH: 200 µm

• LOW COST PLASTIC PACKAGE

1.0

0.5

DESCRIPTION

TheNE425S01isaHetero-JunctionFETthatutilizesthehetero

junctiontocreatehighmobilityelectrons. Itsexcellentlownoise

and high associated gain make it suitable for DBS and other

commercial applications.

10 14

20 30

Frequency, f (GHz)

NEC's stringent quality assurance and test procedures assure

the highest reliability and performance.

RECOMMENDED

OPERATING CONDITIONS (TA = 25°C)

SYMBOLS

CHARACTERISTICS

Drain to Source Voltage

Drain Current

UNITS MIN TYP MAX

VDS

dBm

Input Power

ELECTRICAL CHARACTERISTICS (TA = 25°C)

PART NUMBER

PACKAGE OUTLINE

NE425S01

S01

SYMBOLS

PARAMETERS AND CONDITIONS

Noise Figure, VDS = 2 V, ID = 10 mA, f = 12 GHz

Associated Gain, VDS = 2 V, ID = 10 mA, f = 12 GHz

Transconductance, VDS = 2 V, ID = 10 mA

UNITS

MIN

TYP

0.60

12.0

MAX

NF¹

0.80

10.5

IDSS

VGS(off)

IGSO

Saturated Drain Current, VDS = 2 V, VGS = 0 V

Gate to Source Cutoff Voltage, VDS = 2 V, ID = 100 µA

Gate to Source Leak Current, VGS = -3 V

-0.7

0.5

-2.0

-0.2

µA

Note:

1. Typical values of noise figures and associated gain are those obtained when 50% of the devices from a large number of lots were individually

measured in a circuit with the input individually tuned to obtain the minimum value. Maximum values are criteria established on the production line

as a "go-no-go" screening tuned for the "generic" type but not each specimen.

California Eastern Laboratories

12 3 4 5

中文翻译

下载PDF

与NE425S01_98相关器件

型号	品牌	获取价格	描述	数据表
NE425S01-T1	NEC	获取价格	C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET
NE425S01-T1B	NEC	获取价格	C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET
NE428M01-T1	RENESAS	获取价格	RF SMALL SIGNAL, FET
NE429M01	NEC	获取价格	C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET
NE429M01-A	NEC	获取价格	暂无描述
NE429M01-T1	NEC	获取价格	C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET
NE429M01-T1-A	NEC	获取价格	RF Small Signal Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel,
NE434S01	NEC	获取价格	C BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET
NE434S01_98	NEC	获取价格	C BAND SUPER LOW NOISE HJ FET
NE434S01-T1	NEC	获取价格	C BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET