Datasheet > NE46234-AZ

NE46234-AZ

更新时间： 2024-02-25 08:02:35

品牌	Logo	应用领域
CEL		放大器
页数	文件大小	规格书
7页	163K
描述
NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW DISTORTION AMPLIFIER 3-PIN POWER MINIMOLD

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NE46234-AZ 数据手册

NPN SILICON RF TRANSISTOR

NE46234 / 2SC4703

NPN EPITAXIAL SILICON RF TRANSISTOR FOR

HIGH-FREQUENCY LOW DISTORTION AMPLIFIER

3-PIN POWER MINIMOLD

DESCRIPTION

The NE46234 / 2SC4703 is designed for low distortion, low noise RF amplifier operating with low supply voltage

(VCE = 5 V). This low distortion characteristic makes it suitable for CATV, tele-communication and other use. It

employs surface mount type plastic package, power mini mold (SOT-89).

FEATURES

•

Low distortion, low voltage: IM2 = 55 dBc TYP., IM3 = 76 dBc TYP. @ VCE = 5 V, IC = 50 mA, VO = 105 dBV/75

Large Ptot : Ptot = 1.8 W (Mounted on double-sided copper-clad 16 cm² 0.7 mm (t) ceramic substrate)

Small package : 3-pin power mini mold package

ORDERING INFORMATION

Part Number

Quantity

Supplying Form

• 12 mm wide embossed taping

NE46234-AZ

2SC4703

25 pcs (Non reel)

NE46234-T1-AZ

2SC4703-T1

1 kpcs/reel

• Collector face the perforation side of the tape

Remark To order evaluation samples, contact your nearby sales office.

The unit sample quantity is 25 pcs.

ABSOLUTE MAXIMUM RATINGS (TA = +25C)

Parameter

Collector to Base Voltage

Collector to Emitter Voltage

Emitter to Base Voltage

Collector Current

Symbol

VCBO

VCEO

VEBO

Ratings

Unit

2.5

150

Note

Total Power Dissipation

Junction Temperature

Storage Temperature

Ptot

1.8

150

C

Tstg

65 to +150

Note Mounted on double-sided copper-clad 16 cm² 0.7 mm (t) ceramic substrate

Document No. PU10339EJ01V1DS (1st edition)

Date Published May 2003 CP(K)

The mark  shows major revised points.

12 3 4 5 6 7

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