Datasheet > 晶体管 > 射频小信号场效应晶体管> NE434S01-T1B

NE434S01-T1B

更新时间： 2024-02-27 02:41:37

品牌	Logo	应用领域
日电电子 - NEC		晶体放大器小信号场效应晶体管射频小信号场效应晶体管
页数	文件大小	规格书
12页	78K
描述
C BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET

阅读下载

中文翻译

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

NE434S01-T1B 技术参数

生命周期：	Obsolete	针数：	4
Reach Compliance Code：	compliant	ECCN代码：	EAR99
HTS代码：	8541.21.00.75	风险等级：	5.84
FET 技术：	JUNCTION	最高工作温度：	125 °C
极性/信道类型：	N-CHANNEL	最大功率耗散 (Abs)：	0.3 W
子类别：	Other Transistors	表面贴装：	YES

NE434S01-T1B 数据手册

DATA SHEET

HETERO JUNCTION FIELD EFFECT TRANSISTOR

NE434S01

C BAND SUPER LOW NOISE AMPLIFIER

N-CHANNEL HJ-FET

DESCRIPTION

PACKAGE DIMENSIONS

The NE434S01 is a Herero Junction FET that utilizes the

hetero junction to create high mobility electrons. Its excellent

low noise and high associated gain make it suitable for TVRO

and another commercial systems.

(Unit: mm)

2.0 ± 0.2

FEATURES

•

Super Low Noise Figure & High Associated Gain

NF = 0.35 dB TYP., G^a= 15.5 dB TYP. at f = 4 GHz

Gate Width: W^g= 280 Pm

•

ORDERING INFORMATION

1. Source

PART NUMBER

NE434S01-T1

NE434S01-T1B

SUPPLYING FORM

MARKING

2. Drain

3. Source

4. Gate

Tape & reel 1000 pcs./reel

Tape & reel 4000 pcs./reel

0.65 TYP.

1.9 ± 0.2

1.6

ABSOLUTE MAXIMUM RATINGS (T^A= 25 qC)

Drain to Source Voltage

Gate to Source Voltage

Drain Current

V^DS

V^GS

I^D

4.0

0.125 ± 0.05

–3.0

0.4 MAX.

4.0 ± 0.2

I^DSS

Total Power Dissipation

Channel Temperature

Storage Temperature

P^tot

T^ch

T^stg

300

125

–65 to +125

RECOMMENDED OPERATING CONDITION (T^A= 25 °C)

CHARACTERISTIC

Drain to Source Voltage

Drain Current

SYMBOL

MIN.

TYP.

MAX.

2.5

Unit

V^DS

I^D

dBm

Input Power

Pⁱⁿ

Document No. P11344EJ3V0DS00 (3rd edition)

Date Published October 1996 P

Printed in Japan

1996

12 3 4 5 6 7...12

中文翻译

下载PDF

与NE434S01-T1B相关器件

型号	品牌	获取价格	描述	数据表
NE4558	NXP	获取价格	Dual general-purpose operational amplifier
NE4558D	NXP	获取价格	Dual general-purpose operational amplifier
NE4558D-T	PHILIPS	获取价格	Operational Amplifier, 2 Func, 6000uV Offset-Max, BIPolar, PDSO8,
NE4558FE-B	PHILIPS	获取价格	Operational Amplifier, 2 Func, 7500uV Offset-Max, BIPolar, CDIP8
NE4558N	NXP	获取价格	Dual general-purpose operational amplifier
NE4558N	PHILIPS	获取价格	Operational Amplifier, 2 Func, 6000uV Offset-Max, BIPolar, PDIP8,
NE46100	NEC	获取价格	NECs NPN MEDIUM POWER MICROWAVE TRANSISTOR
NE46100	CEL	获取价格	NECs NPN MEDIUM POWER MICROWAVE TRANSISTOR
NE46134	CEL	获取价格	NECs NPN MEDIUM POWER MICROWAVE TRANSISTOR
NE46134	NEC	获取价格	NECs NPN MEDIUM POWER MICROWAVE TRANSISTOR