NE4210S01-T1-A

更新时间： 2024-01-29 01:34:45

品牌	Logo	应用领域
日电电子 - NEC		晶体放大器小信号场效应晶体管射频小信号场效应晶体管
页数	文件大小	规格书
16页	65K
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中文翻译

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数据手册

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NE4210S01-T1-A 数据手册

DATA SHEET

HETERO JUNCTION FIELD EFFECT TRANSISTOR

NE4210S01

X to Ku BAND SUPER LOW NOISE AMPLIFIER

N-CHANNEL HJ-FET

DESCRIPTION

The NE4210S01 is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its

excellent low noise and associated gain make it suitable for DBS and another commercial systems.

FEATURES

•

Super Low Noise Figure & High Associated Gain

NF = 0.5 dB TYP. Ga = 13.0 dB TYP. @f = 12 GHz

Gate Length: L^g≤ 0.20 µm

•

Gate Width : W^g= 160 µm

ORDERING INFORMATION (PLAN)

Part Number

Marking

Supplying Form

NE4210S01-T1

NE4210S01-T1B

Tape & reel 1 kp/reel

Tape & reel 4 kp/reel

Remark To order evaluation samples, please contact your local NEC sales office. (Part number for sample order:

NE4210S01)

ABSOLUTE MAXIMUM RATINGS (T^A= +25°C)

Parameter

Drain to Source Voltage

Symbol

V^DS

V^GS

I^D

Ratings

4.0

Unit

Gate to Source Voltage

Drain Current

–3.0

I^DSS

µA

°C

Gate Current

I^G

100

Total Power Dissipation

Channel Temperature

Storage Temperature

P^tot

165

T^ch

125

T^stg

–65 to +125

RECOMMENDED OPERATING CONDITIONS (T^A= +25°C)

Parameter

Drain to Source Voltage

Symbol

V^DS

MIN.

TYP.

MAX.

Unit

–

Drain Current

Input Power

I^D

–

dBm

Pⁱⁿ

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for

availability and additional information.

Document No. P14232EJ2V0DS00 (2nd edition)

The mark shows major revised points.

Date Published November 1999 N CP(K)

Printed in Japan

1999

12 3 4 5 6 7...16

中文翻译

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