是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Transferred | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | HTS代码: | 8541.21.00.95 |
风险等级: | 5.09 | 外壳连接: | SOURCE |
配置: | SINGLE | 最小漏源击穿电压: | 3 V |
最大漏极电流 (ID): | 0.015 A | FET 技术: | HETERO-JUNCTION |
最高频带: | KU BAND | JESD-30 代码: | X-PXMW-G4 |
湿度敏感等级: | 1 | 元件数量: | 1 |
端子数量: | 4 | 工作模式: | DEPLETION MODE |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | UNSPECIFIED |
封装形式: | MICROWAVE | 峰值回流温度(摄氏度): | 260 |
极性/信道类型: | N-CHANNEL | 最小功率增益 (Gp): | 11 dB |
认证状态: | Not Qualified | 表面贴装: | YES |
端子形式: | GULL WING | 端子位置: | UNSPECIFIED |
处于峰值回流温度下的最长时间: | 10 | 晶体管应用: | AMPLIFIER |
晶体管元件材料: | GALLIUM ARSENIDE | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
NE4211M01 | ETC |
获取价格 |
Discrete |
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NE4211M01-T1 | NEC |
获取价格 |
RF Small Signal Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, |
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NE42484A | NEC |
获取价格 |
NONLINEAR MODEL |
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NE42484A-SL | NEC |
获取价格 |
RF Small Signal Field-Effect Transistor, 1-Element, KU Band, Silicon, N-Channel, Hetero-ju |
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NE42484A-T1 | CEL |
获取价格 |
RF Small Signal Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, H |
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NE42484A-T1 | NEC |
获取价格 |
RF Small Signal Field-Effect Transistor, 1-Element, KU Band, Silicon, N-Channel, Hetero-ju |
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NE42484A-T1A | NEC |
获取价格 |
RF Small Signal Field-Effect Transistor, 1-Element, KU Band, Silicon, N-Channel, Hetero-ju |
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NE42484A-T2 | CEL |
获取价格 |
RF Small Signal Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, H |
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NE42484C-SL | NEC |
获取价格 |
RF Small Signal Field-Effect Transistor, 1-Element, KU Band, Silicon, N-Channel, Hetero-ju |
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NE42484C-SL | RENESAS |
获取价格 |
KU BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HFET |
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