Datasheet > NE4211M01

NE4211M01

更新时间： 2024-02-11 11:51:20

品牌	Logo	应用领域
其他 - ETC		/
页数	文件大小	规格书
8页	42K
描述
Discrete

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中文翻译

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数据手册

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NE4211M01 数据手册

DATA SHEET

HETERO JUNCTION FIELD EFFECT TRANSISTOR

NE4211M01

C to Ku BAND SUPER LOW NOISE AMPLIFIER

N-CHANNEL HJ-FET

FEATURES

•

Super low noise figure & associated gain:

NF = 0.75 TYP., G^a= 12 dB TYP. @ f = 12 GHz

NF = 0.4 TYP., G^a= 16 dB TYP. @ f = 4 GHz

6-pin super minimold package

•

Gate width: W^g= 160 µm

ORDERING INFORMATION

Part Number

Package

Marking

V74

Supplying Form

• 8 mm wide embossed taping

NE4211M01-T1

6-pin super minimold

• Pin 1, 2, 3 face the perforation side of the tape

• Qty 3 kpcs/reel

Remark To order evaluation samples, contact your nearby sales office.

Part number for sample order: NE4211M01

ABSOLUTE MAXIMUM RATINGS (T^A= +25°C)

Parameter

Drain to Source Voltage

Gate to Source Voltage

Drain Current

Symbol

V^DS

V^GS

I^D

Ratings

4.0

Unit

−3.0

I^DSS

µA

°C

Gate Current

I^G

Total Power Dissipation

Channel Temperature

Storage Temperature

P^tot

125

T^ch

+125

−65 to +125

T^stg

Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.

The information in this document is subject to change without notice. Before using this document, please confirm that

this is the latest version.

Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices

representative for availability and additional information.

Document No. PG10325EJ01V0DS (1st edition)

Date Published January 2003 CP(K)

Printed in Japan

NEC Compound Semiconductor Devices 2002, 2003

12 3 4 5 6 7 8

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