Datasheet > NE4210M01

NE4210M01

更新时间： 2024-02-26 09:35:34

品牌	Logo	应用领域
日电电子 - NEC		放大器
页数	文件大小	规格书
12页	80K
描述
C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET

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中文翻译

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数据手册

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NE4210M01 数据手册

PRELIMINARY DATA SHEET

HETERO JUNCTION FIELD EFFECT TRANSISTOR

NE4210M01

C to Ku BAND SUPER LOW NOISE AMPLIFIER

N-CHANNEL HJ-FET

DESCRIPTION

The NE4210M01 is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its

excellent low noise and high associated gain make it suitable for DBS, TVRO and another commercial systems.

FEATURES

•

Super Low Noise Figure & High Associated Gain

NF = 0.8 dB TYP., G^a= 11 dB TYP. at f = 12 GHz

6pin super minimold package

•

Gate Width: Wg = 200µm

ORDERING INFORMATION

Part Number

Package

6-pin super minimold

Supplying Form

Marking

NE4210M01-T1

Embossed tape 8 mm wide.

1, 2, 3 pins face to perforation

side of the tape

V73

ABSOLUTE MAXIMUM RATINGS (T^A= 25 °C)

Parameter

Drain to Source Voltage

Gate to Source Voltage

Drain Current

Symbol

V^DS

V^GS

I^D

Ratings

Unit

4.0

−3.0

I^DSS

µA

°C

Gate Current

I^G

100

Total Power Dissipation

Channel Temperature

Storage Temperature

P^tot

125

T^ch

125

T^stg

−65 to +125

The information in this document is subject to change without notice.

Document No. P13682EJ1V0DS00 (1st edition)

Date Published August 1998 N CP(K)

Printed in Japan

1998

12 3 4 5 6 7...12

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与NE4210M01相关器件

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NE4210M01-T1	NEC	获取价格	C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET
NE4210S01	NEC	获取价格	X to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET
NE4210S01	CEL	获取价格	SUPER LOW NOISE HJ FET
NE4210S01	RENESAS	获取价格	NE4210S01
NE4210S01-A	NEC	获取价格	暂无描述
NE4210S01-T1	NEC	获取价格	X to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET
NE4210S01-T1	CEL	获取价格	SUPER LOW NOISE HJ FET
NE4210S01-T1-A	NEC	获取价格	暂无描述
NE4210S01-T1B	NEC	获取价格	X to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET
NE4210S01-T1B	CEL	获取价格	SUPER LOW NOISE HJ FET