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NDP6060 PDF预览

NDP6060

更新时间: 2024-11-24 22:40:35
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 晶体晶体管
页数 文件大小 规格书
12页 361K
描述
N-Channel Enhancement Mode Field Effect Transistor

NDP6060 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Transferred零件包装代码:TO-220
包装说明:FLANGE MOUNT, R-PSFM-T3针数:3
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.29.00.95风险等级:5.39
雪崩能效等级(Eas):200 mJ配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:60 V最大漏极电流 (Abs) (ID):48 A
最大漏极电流 (ID):48 A最大漏源导通电阻:0.025 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-220AB
JESD-30 代码:R-PSFM-T3JESD-609代码:e3
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE最高工作温度:175 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):100 W
最大脉冲漏极电流 (IDM):144 A认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:NO
端子面层:Matte Tin (Sn)端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON

NDP6060 数据手册

 浏览型号NDP6060的Datasheet PDF文件第2页浏览型号NDP6060的Datasheet PDF文件第3页浏览型号NDP6060的Datasheet PDF文件第4页浏览型号NDP6060的Datasheet PDF文件第5页浏览型号NDP6060的Datasheet PDF文件第6页浏览型号NDP6060的Datasheet PDF文件第7页 
March 1996  
NDP6060 / NDB6060  
N-Channel Enhancement Mode Field Effect Transistor  
General Description  
Features  
48A, 60V. RDS(ON) = 0.025W @ VGS=10V.  
These N-Channel enhancement mode power field effect  
transistors are produced using Fairchild's proprietary, high  
cell density, DMOS technology. This very high density  
process has been especially tailored to minimize on-state  
resistance, provide superior switching performance, and  
withstand high energy pulses in the avalanche and  
commutation modes. These devices are particularly suited  
for low voltage applications such as automotive, DC/DC  
converters, PWM motor controls, and other battery  
powered circuits where fast switching, low in-line power  
loss, and resistance to transients are needed.  
Critical DC electrical parameters specified at elevated  
temperature.  
Rugged internal source-drain diode can eliminate the need  
for an external Zener diode transient suppressor.  
175°C maximum junction temperature rating.  
High density cell design for extremely low RDS(ON)  
.
TO-220 and TO-263 (D2PAK) package for both through hole  
and surface mount applications.  
________________________________________________________________________________  
D
G
S
Absolute Maximum Ratings  
Symbol Parameter  
TC = 25°C unless otherwise noted  
NDP6060  
NDB6060  
Units  
V
Drain-Source Voltage  
60  
60  
VDSS  
VDGR  
V
Drain-Gate Voltage (RGS < 1 MW)  
VGSS  
Gate-Source Voltage - Continuous  
± 20  
± 40  
48  
V
- Nonrepetitive (tP < 50 µs)  
Drain Current - Continuous  
Tc=25oC  
TC=100oC  
A
ID  
32  
- Continuous  
- Pulsed  
144  
PD  
Total Power Dissipation @ TC = 25°C  
Derate above 25°C  
100  
0.67  
W
W/°C  
°C  
Operating and Storage Temperature Range  
-65 to 175  
275  
TJ,TSTG  
TL  
Maximum lead temperature for soldering purposes,  
1/8" from case for 5 seconds  
°C  
© 1997 Fairchild Semiconductor Corporation  
NDP6060 Rev. B1 / NDB6060 Rev. C  

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