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NDP6060LS62Z PDF预览

NDP6060LS62Z

更新时间： 2024-11-08 14:54:07
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 局域网开关脉冲晶体管
页数 文件大小 规格书
12页 360K
描述
Power Field-Effect Transistor, 48A I(D), 60V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN

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NDP6060LS62Z 技术参数

生命周期：Obsolete零件包装代码：TO-220AB
包装说明：FLANGE MOUNT, R-PSFM-T3针数：3
Reach Compliance Code：unknownECCN代码：EAR99
风险等级：5.71雪崩能效等级（Eas）：200 mJ
配置：SINGLE WITH BUILT-IN DIODE最小漏源击穿电压：60 V
最大漏极电流 (ID)：48 A最大漏源导通电阻：0.025 Ω
FET 技术：METAL-OXIDE SEMICONDUCTORJEDEC-95代码：TO-220AB
JESD-30 代码：R-PSFM-T3元件数量：1
端子数量：3工作模式：ENHANCEMENT MODE
最高工作温度：175 °C封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：FLANGE MOUNT
极性/信道类型：N-CHANNEL最大脉冲漏极电流 (IDM)：144 A
认证状态：Not Qualified表面贴装：NO
端子形式：THROUGH-HOLE端子位置：SINGLE
晶体管应用：SWITCHING晶体管元件材料：SILICON
Base Number Matches：1

NDP6060LS62Z 数据手册

 浏览型号NDP6060LS62Z的Datasheet PDF文件第2页浏览型号NDP6060LS62Z的Datasheet PDF文件第3页浏览型号NDP6060LS62Z的Datasheet PDF文件第4页浏览型号NDP6060LS62Z的Datasheet PDF文件第5页浏览型号NDP6060LS62Z的Datasheet PDF文件第6页浏览型号NDP6060LS62Z的Datasheet PDF文件第7页 
April 1996  
NDP6060L / NDB6060L  
N-Channel Logic Level Enhancement Mode Field Effect Transistor  
General Description  
Features  
48A, 60V. RDS(ON) = 0.025W @ VGS = 5V.  
These logic level N-Channel enhancement mode power  
field effect transistors are produced using Fairchild's  
proprietary, high cell density, DMOS technology. This  
very high density process has been especially tailored to  
minimize on-state resistance, provide superior switching  
performance, and withstand high energy pulses in the  
avalanche and commutation modes. These devices are  
particularly suited for low voltage applications such as  
automotive, DC/DC converters, PWM motor controls,  
and other battery powered circuits where fast switching,  
low in-line power loss, and resistance to transients are  
needed.  
Low drive requirements allowing operation directly from logic  
drivers. VGS(TH) < 2.0V.  
Critical DC electrical parameters specified at elevated  
temperature.  
Rugged internal source-drain diode can eliminate the need  
for an external Zener diode transient suppressor.  
175°C maximum junction temperature rating.  
High density cell design for extremely low RDS(ON)  
TO-220 and TO-263 (D2PAK) package for both through hole  
and surface mount applications.  
.
________________________________________________________________________________  
D
G
S
Absolute Maximum Ratings  
Symbol Parameter  
TC = 25°C unless otherwise noted  
NDP6060L  
NDB6060L  
Units  
V
Drain-Source Voltage  
60  
60  
VDSS  
VDGR  
V
Drain-Gate Voltage (RGS < 1 MW)  
Gate-Source Voltage - Continuous  
± 16  
± 25  
V
VGSS  
- Nonrepetitive (tP < 50 µs)  
Drain Current - Continuous  
ID  
48  
A
- Pulsed  
144  
PD  
Total Power Dissipation @ TC = 25°C  
Derate above 25°C  
100  
W
W/°C  
°C  
0.67  
Operating and Storage Temperature  
-65 to 175  
275  
TJ,TSTG  
TL  
Maximum lead temperature for soldering  
purposes, 1/8" from case for 5 seconds  
°C  
© 1997 Fairchild Semiconductor Corporation  
NDP6060L Rev. D / NDB6060L Rev. E  
1234567...12

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