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NDP610B PDF预览

NDP610B

更新时间: 2024-11-24 22:40:35
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 晶体晶体管
页数 文件大小 规格书
6页 76K
描述
N-Channel Enhancement Mode Field Effect Transistor

NDP610B 数据手册

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May 1994  
NDP610A / NDP610AE / NDP610B / NDP610BE  
NDB610A / NDB610AE / NDB610B / NDB610BE  
N-Channel Enhancement Mode Field Effect Transistor  
General Description  
Features  
These N-channel enhancement mode power field  
effect transistors are produced using Fairchild's  
proprietary, high cell density, DMOS technology. This  
very high density process has been especially  
tailored to minimize on-state resistance, provide  
superior switching performance, and withstand high  
energy pulses in the avalanche and commutation  
modes. These devices are particularly suited for low  
voltage applications such as automotive, DC/DC  
converters, PWM motor controls, and other battery  
powered circuits where fast switching, low in-line  
power loss, and resistance to transients are needed.  
26 and 24A, 100V. RDS(ON) = 0.065 and 0.080W.  
Critical DC electrical parameters specified at  
elevated temperature.  
Rugged internal source-drain diode can eliminate  
the need for an external Zener diode transient  
suppressor.  
175°C maximum junction temperature rating.  
High density cell design (3 million/in²) for extremely  
low RDS(ON)  
.
TO-220 and TO-263 (D2PAK) package for both  
through hole and surface mount applications.  
_____________________________________________________________________  
D
G
S
Absolute Maximum Ratings  
TC = 25°C unless otherwise noted  
NDP610A NDP610AE  
NDB610A NDB610AE  
NDP610B NDP610BE  
NDB610B NDB610BE  
Symbol Parameter  
Units  
V
VDSS  
VDGR  
VGSS  
Drain-Source Voltage  
100  
100  
±20  
±40  
V
Drain-Gate Voltage (RGS < 1 MW)  
Gate-Source Voltage - Continuous  
V
V
- Nonrepetitive (tP < 50 ms)  
Drain Current - Continuous  
- Pulsed  
ID  
26  
24  
96  
A
104  
A
PD  
100  
W
Total Power Dissipation @ TC = 25°C  
Derate above 25°C  
0.67  
W/°C  
°C  
TJ,TSTG Operating and Storage Temperature Range  
-65 to 175  
275  
TL  
Maximum lead temperature for soldering  
purposes, 1/8" from case for 5 seconds  
°C  
© 1997 Fairchild Semiconductor Corporation  
NDP610.SAM  

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