是否Rohs认证: | 不符合 | 生命周期: | Obsolete |
零件包装代码: | TO-220AB | 包装说明: | TO-220, 3 PIN |
针数: | 3 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | 风险等级: | 5.77 |
Is Samacsys: | N | 雪崩能效等级(Eas): | 250 mJ |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 100 V |
最大漏极电流 (Abs) (ID): | 24 A | 最大漏极电流 (ID): | 24 A |
最大漏源导通电阻: | 0.08 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95代码: | TO-220AB | JESD-30 代码: | R-PSFM-T3 |
JESD-609代码: | e0 | 元件数量: | 1 |
端子数量: | 3 | 工作模式: | ENHANCEMENT MODE |
最高工作温度: | 175 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | FLANGE MOUNT |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性/信道类型: | N-CHANNEL |
最大功率耗散 (Abs): | 100 W | 最大脉冲漏极电流 (IDM): | 96 A |
认证状态: | Not Qualified | 子类别: | FET General Purpose Power |
表面贴装: | NO | 端子面层: | Tin/Lead (Sn/Pb) |
端子形式: | THROUGH-HOLE | 端子位置: | SINGLE |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
NDP610BEL | TI |
获取价格 |
24A, 100V, 0.08ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220, TO-220, 3 PIN | |
NDP610BL | NSC |
获取价格 |
TRANSISTOR 24 A, 100 V, 0.08 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220, TO-220, 3 PIN, FET | |
NDP610BL | TI |
获取价格 |
24A, 100V, 0.08ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220, TO-220, 3 PIN | |
NDP610BS62Z | FAIRCHILD |
获取价格 |
Power Field-Effect Transistor, 24A I(D), 100V, 0.08ohm, 1-Element, N-Channel, Silicon, Met | |
NDP7050 | FAIRCHILD |
获取价格 |
N-Channel Enhancement Mode Field Effect Transistor | |
NDP7050J69Z | FAIRCHILD |
获取价格 |
Power Field-Effect Transistor, 75A I(D), 50V, 0.015ohm, 1-Element, N-Channel, Silicon, Met | |
NDP7050L | FAIRCHILD |
获取价格 |
N-Channel Logic Level Enhancement Mode Field Effect Transistor | |
NDP7050LJ69Z | FAIRCHILD |
获取价格 |
Power Field-Effect Transistor, 75A I(D), 50V, 0.015ohm, 1-Element, N-Channel, Silicon, Met | |
NDP7051 | FAIRCHILD |
获取价格 |
N-Channel Enhancement Mode Field Effect Transistor | |
NDP7051 | TI |
获取价格 |
64A, 50V, 0.016ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220, TO-220, 3 PIN |