5秒后页面跳转
NDP610BE PDF预览

NDP610BE

更新时间: 2024-11-20 22:36:47
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 晶体晶体管功率场效应晶体管开关脉冲局域网
页数 文件大小 规格书
6页 76K
描述
N-Channel Enhancement Mode Field Effect Transistor

NDP610BE 技术参数

是否Rohs认证:不符合生命周期:Obsolete
零件包装代码:TO-220AB包装说明:TO-220, 3 PIN
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.77
Is Samacsys:N雪崩能效等级(Eas):250 mJ
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:100 V
最大漏极电流 (Abs) (ID):24 A最大漏极电流 (ID):24 A
最大漏源导通电阻:0.08 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-220ABJESD-30 代码:R-PSFM-T3
JESD-609代码:e0元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
最高工作温度:175 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):100 W最大脉冲漏极电流 (IDM):96 A
认证状态:Not Qualified子类别:FET General Purpose Power
表面贴装:NO端子面层:Tin/Lead (Sn/Pb)
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

NDP610BE 数据手册

 浏览型号NDP610BE的Datasheet PDF文件第2页浏览型号NDP610BE的Datasheet PDF文件第3页浏览型号NDP610BE的Datasheet PDF文件第4页浏览型号NDP610BE的Datasheet PDF文件第5页浏览型号NDP610BE的Datasheet PDF文件第6页 
May 1994  
NDP610A / NDP610AE / NDP610B / NDP610BE  
NDB610A / NDB610AE / NDB610B / NDB610BE  
N-Channel Enhancement Mode Field Effect Transistor  
General Description  
Features  
These N-channel enhancement mode power field  
effect transistors are produced using Fairchild's  
proprietary, high cell density, DMOS technology. This  
very high density process has been especially  
tailored to minimize on-state resistance, provide  
superior switching performance, and withstand high  
energy pulses in the avalanche and commutation  
modes. These devices are particularly suited for low  
voltage applications such as automotive, DC/DC  
converters, PWM motor controls, and other battery  
powered circuits where fast switching, low in-line  
power loss, and resistance to transients are needed.  
26 and 24A, 100V. RDS(ON) = 0.065 and 0.080W.  
Critical DC electrical parameters specified at  
elevated temperature.  
Rugged internal source-drain diode can eliminate  
the need for an external Zener diode transient  
suppressor.  
175°C maximum junction temperature rating.  
High density cell design (3 million/in²) for extremely  
low RDS(ON)  
.
TO-220 and TO-263 (D2PAK) package for both  
through hole and surface mount applications.  
_____________________________________________________________________  
D
G
S
Absolute Maximum Ratings  
TC = 25°C unless otherwise noted  
NDP610A NDP610AE  
NDB610A NDB610AE  
NDP610B NDP610BE  
NDB610B NDB610BE  
Symbol Parameter  
Units  
V
VDSS  
VDGR  
VGSS  
Drain-Source Voltage  
100  
100  
±20  
±40  
V
Drain-Gate Voltage (RGS < 1 MW)  
Gate-Source Voltage - Continuous  
V
V
- Nonrepetitive (tP < 50 ms)  
Drain Current - Continuous  
- Pulsed  
ID  
26  
24  
96  
A
104  
A
PD  
100  
W
Total Power Dissipation @ TC = 25°C  
Derate above 25°C  
0.67  
W/°C  
°C  
TJ,TSTG Operating and Storage Temperature Range  
-65 to 175  
275  
TL  
Maximum lead temperature for soldering  
purposes, 1/8" from case for 5 seconds  
°C  
© 1997 Fairchild Semiconductor Corporation  
NDP610.SAM  

与NDP610BE相关器件

型号 品牌 获取价格 描述 数据表
NDP610BEL TI

获取价格

24A, 100V, 0.08ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220, TO-220, 3 PIN
NDP610BL NSC

获取价格

TRANSISTOR 24 A, 100 V, 0.08 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220, TO-220, 3 PIN, FET
NDP610BL TI

获取价格

24A, 100V, 0.08ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220, TO-220, 3 PIN
NDP610BS62Z FAIRCHILD

获取价格

Power Field-Effect Transistor, 24A I(D), 100V, 0.08ohm, 1-Element, N-Channel, Silicon, Met
NDP7050 FAIRCHILD

获取价格

N-Channel Enhancement Mode Field Effect Transistor
NDP7050J69Z FAIRCHILD

获取价格

Power Field-Effect Transistor, 75A I(D), 50V, 0.015ohm, 1-Element, N-Channel, Silicon, Met
NDP7050L FAIRCHILD

获取价格

N-Channel Logic Level Enhancement Mode Field Effect Transistor
NDP7050LJ69Z FAIRCHILD

获取价格

Power Field-Effect Transistor, 75A I(D), 50V, 0.015ohm, 1-Element, N-Channel, Silicon, Met
NDP7051 FAIRCHILD

获取价格

N-Channel Enhancement Mode Field Effect Transistor
NDP7051 TI

获取价格

64A, 50V, 0.016ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220, TO-220, 3 PIN