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NDP610BL PDF预览

NDP610BL

更新时间: 2024-11-21 18:18:47
品牌 Logo 应用领域
美国国家半导体 - NSC 局域网晶体管
页数 文件大小 规格书
1页 103K
描述
TRANSISTOR 24 A, 100 V, 0.08 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220, TO-220, 3 PIN, FET General Purpose Power

NDP610BL 技术参数

生命周期:Obsolete包装说明:FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.69其他特性:LOGIC LEVEL COMPATIBLE
配置:SINGLE最小漏源击穿电压:100 V
最大漏极电流 (ID):24 A最大漏源导通电阻:0.08 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-220AB
JESD-30 代码:R-PSFM-T3元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT极性/信道类型:N-CHANNEL
功耗环境最大值:100 W认证状态:Not Qualified
表面贴装:NO端子形式:THROUGH-HOLE
端子位置:SINGLE晶体管元件材料:SILICON
Base Number Matches:1

NDP610BL 数据手册

  
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