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NDP6060L PDF预览

NDP6060L

更新时间： 2024-11-09 11:13:11
品牌 Logo 应用领域
安森美 - ONSEMI 局域网开关脉冲晶体管场效应晶体管
页数 文件大小 规格书
8页 317K
描述
N 沟道逻辑电平增强型场效应晶体管 60V，48A，25mΩ

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中文翻译

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NDP6060L 技术参数

是否无铅： 不含铅生命周期：Active
包装说明：FLANGE MOUNT, R-PSFM-T3Reach Compliance Code：compliant
ECCN代码：EAR99HTS代码：8541.29.00.95
Factory Lead Time：1 week风险等级：0.96
Is Samacsys：N其他特性：LOGIC LEVEL COMPATIBLE
雪崩能效等级（Eas）：200 mJ配置：SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压：60 V最大漏极电流 (Abs) (ID)：48 A
最大漏极电流 (ID)：48 A最大漏源导通电阻：0.025 Ω
FET 技术：METAL-OXIDE SEMICONDUCTORJEDEC-95代码：TO-220AB
JESD-30 代码：R-PSFM-T3JESD-609代码：e3
元件数量：1端子数量：3
工作模式：ENHANCEMENT MODE最高工作温度：175 °C
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：FLANGE MOUNT峰值回流温度（摄氏度）：NOT SPECIFIED
极性/信道类型：N-CHANNEL最大功率耗散 (Abs)：100 W
最大脉冲漏极电流 (IDM)：144 A认证状态：Not Qualified
子类别：FET General Purpose Power表面贴装：NO
端子面层：Tin (Sn)端子形式：THROUGH-HOLE
端子位置：SINGLE处于峰值回流温度下的最长时间：NOT SPECIFIED
晶体管应用：SWITCHING晶体管元件材料：SILICON
Base Number Matches：1

NDP6060L 数据手册

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DATA SHEET  
www.onsemi.com  
MOSFET – N-Channel, Field  
Effect Transistor,  
Enhancement Mode  
V
R
MAX  
I MAX  
D
DSS  
DS(ON)  
60 V  
0.025 mꢀ @ 5 V  
48 A  
D
NDP6060L / NDB6060L  
General Description  
These logic level N−Channel enhancement mode power field effect  
transistors are produced using onsemi’s proprietary, high cell density,  
DMOS technology. This very high density process has been especially  
tailored to minimize on−state resistance, provide superior switching  
performance, and withstand high energy pulses in the avalanche and  
commutation modes. These devices are particularly suited for low  
voltage applications such as automotive, DC/DC converters, PWM  
motor controls, and other battery powered circuits where fast  
switching, low in−line power loss, and resistance to transients are  
needed.  
G
S
N−CHANNEL MOSFET  
D
G
G
D
S
D
Features  
S
• 48 A, 60 V  
TO−220−3LD  
CASE 340AT  
D2PAK−3  
(TO−263, 3−LEAD)  
CASE 418AJ  
♦ R  
= 0.025 mꢀ @ V = 5 V  
GS  
DS(ON)  
• Low Drive Requirements Allowing Operation Directly from Logic  
Drivers. V < 2.0 V  
GS(TH)  
MARKING DIAGRAM  
• Critical DC Electrical Parameters Specified at Elevated Temperature  
• Rugged Internal Source−Drain Diode Can Eliminate the Need for an  
External Zener Diode Transient Suppressor  
XXXXX  
XXXXX  
XXXXXXXXG  
AYWW  
• 175°C Maximum Junction Temperature Rating  
AYWWZZ  
• High Density Cell Design for Extremely Low R  
DS(ON)  
2
• TO−220 and TO−263 (D PAK) Package for Both Through Hole  
and Surface Mount Applications  
• These Devices are Pb−Free and are RoHS Compliant  
XXXX = Specific Device Code  
A
Y
= Assembly Location  
= Year  
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
C
WW = Work Week  
Symbol  
Rating  
NDP6060L / Unit  
NDB6060L  
ZZ  
G
= Assembly Lot Code  
= Pb−Free Package  
V
Drain−Source Voltage  
60  
60  
V
V
V
DSS  
V
DGR  
Drain−Gate Voltage (R ≤ 1 MΩ)  
GS  
ORDERING INFORMATION  
V
GSS  
Drain−Source Voltage  
− Continuous  
†
16  
25  
Package  
Device  
Shipping  
− Nonrepetiti (t < 50 μs)  
p
TO−220−3LD  
(Pb−Free / Halide Free) Units / Tube  
800 /  
NDP6060L  
NDB6060L  
I
Drain Current  
A
D
− Continuous  
− Pulsed  
48  
144  
800 /  
Units / Tube  
D2PAK−3  
(TO−263, 3−LEAD)  
(Pb−Free)  
P
Total Power Dissipatiion ꢁ T = 25°C  
100  
0.67  
W
W/°C  
°C  
D
C
− Derate above 25°C  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specification  
Brochure, BRD8011/D.  
T ,T  
Operating and Storage Temperature Range  
−65 to 175  
275  
J
STG  
T
Maximum lead temperature for soldering  
purposes, 1/8” from case for 5 seconds  
°C  
L
Stresses exceeding those listed in the Maximum Ratings table may damage the  
device. If any of these limits are exceeded, device functionality should not be  
assumed, damage may occur and reliability may be affected.  
© Semiconductor Components Industries, LLC, 2023  
1
Publication Order Number:  
January, 2023 − Rev. 6  
NDP6060L/D  
12345678

中文翻译

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NDP6060L_NL FAIRCHILD

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 		Power Field-Effect Transistor, 48A I(D), 60V, 0.025ohm, 1-Element, N-Channel, Silicon, Met
NDP6060LJ69Z FAIRCHILD

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 		Power Field-Effect Transistor, 48A I(D), 60V, 0.025ohm, 1-Element, N-Channel, Silicon, Met
NDP606A NSC

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NDP606AL TI

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 		TRANSISTOR 48 A, 60 V, 0.025 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, FET General Purp
NDP606B NSC

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 		Trans MOSFET N-CH 60V 48A 3-Pin(3+Tab) TO-220AB Rail
NDP606BE NSC

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 		TRANSISTOR 42 A, 60 V, 0.028 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220, TO-220, 3 PIN, FET

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