生命周期: | Obsolete | 包装说明: | FLANGE MOUNT, R-PSFM-T3 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
风险等级: | 5.44 | 其他特性: | LOGIC LEVEL COMPATIBLE |
雪崩能效等级(Eas): | 200 mJ | 配置: | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压: | 60 V | 最大漏极电流 (ID): | 48 A |
最大漏源导通电阻: | 0.025 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
最大反馈电容 (Crss): | 400 pF | JEDEC-95代码: | TO-220AB |
JESD-30 代码: | R-PSFM-T3 | 元件数量: | 1 |
端子数量: | 3 | 工作模式: | ENHANCEMENT MODE |
最高工作温度: | 175 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | FLANGE MOUNT |
极性/信道类型: | N-CHANNEL | 功耗环境最大值: | 100 W |
最大脉冲漏极电流 (IDM): | 144 A | 认证状态: | Not Qualified |
表面贴装: | NO | 端子形式: | THROUGH-HOLE |
端子位置: | SINGLE | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | 最大关闭时间(toff): | 400 ns |
最大开启时间(吨): | 530 ns |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
NDP6060L_NL | FAIRCHILD |
获取价格 |
Power Field-Effect Transistor, 48A I(D), 60V, 0.025ohm, 1-Element, N-Channel, Silicon, Met | |
NDP6060LJ69Z | FAIRCHILD |
获取价格 |
Power Field-Effect Transistor, 48A I(D), 60V, 0.025ohm, 1-Element, N-Channel, Silicon, Met | |
NDP6060LS62Z | FAIRCHILD |
获取价格 |
Power Field-Effect Transistor, 48A I(D), 60V, 0.025ohm, 1-Element, N-Channel, Silicon, Met | |
NDP6060S62Z | FAIRCHILD |
获取价格 |
Power Field-Effect Transistor, 48A I(D), 60V, 0.025ohm, 1-Element, N-Channel, Silicon, Met | |
NDP606A | NSC |
获取价格 |
N-Channel Enhancement Mode Power Fleid Effect Transistor | |
NDP606AL | TI |
获取价格 |
TRANSISTOR 48 A, 60 V, 0.025 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, FET General Purp | |
NDP606B | NSC |
获取价格 |
N-Channel Enhancement Mode Power Fleid Effect Transistor | |
NDP606B | NJSEMI |
获取价格 |
Trans MOSFET N-CH 60V 48A 3-Pin(3+Tab) TO-220AB Rail | |
NDP606BE | NSC |
获取价格 |
TRANSISTOR 42 A, 60 V, 0.028 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220, TO-220, 3 PIN, FET | |
NDP606BEL | NSC |
获取价格 |
TRANSISTOR 42 A, 60 V, 0.028 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220, TO-220, 3 PIN, FET |