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NDP6060L_NL PDF预览

NDP6060L_NL

更新时间： 2024-11-10 13:11:59
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 晶体晶体管
页数 文件大小 规格书
12页 361K
描述
Power Field-Effect Transistor, 48A I(D), 60V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE, TO-220, 3 PIN

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NDP6060L_NL 技术参数

生命周期：Obsolete零件包装代码：TO-220AB
包装说明：FLANGE MOUNT, R-PSFM-T3针数：3
Reach Compliance Code：unknownECCN代码：EAR99
风险等级：5.71其他特性：LOGIC LEVEL COMPATIBLE
雪崩能效等级（Eas）：200 mJ配置：SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压：60 V最大漏极电流 (ID)：48 A
最大漏源导通电阻：0.025 ΩFET 技术：METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码：TO-220ABJESD-30 代码：R-PSFM-T3
JESD-609代码：e3元件数量：1
端子数量：3工作模式：ENHANCEMENT MODE
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：FLANGE MOUNT极性/信道类型：N-CHANNEL
最大脉冲漏极电流 (IDM)：144 A认证状态：Not Qualified
表面贴装：NO端子面层：MATTE TIN
端子形式：THROUGH-HOLE端子位置：SINGLE
晶体管应用：SWITCHING晶体管元件材料：SILICON
Base Number Matches：1

NDP6060L_NL 数据手册

 浏览型号NDP6060L_NL的Datasheet PDF文件第2页浏览型号NDP6060L_NL的Datasheet PDF文件第3页浏览型号NDP6060L_NL的Datasheet PDF文件第4页浏览型号NDP6060L_NL的Datasheet PDF文件第5页浏览型号NDP6060L_NL的Datasheet PDF文件第6页浏览型号NDP6060L_NL的Datasheet PDF文件第7页 
March 1996  
NDP6060 / NDB6060  
N-Channel Enhancement Mode Field Effect Transistor  
General Description  
Features  
48A, 60V. RDS(ON) = 0.025W @ VGS=10V.  
These N-Channel enhancement mode power field effect  
transistors are produced using Fairchild's proprietary, high  
cell density, DMOS technology. This very high density  
process has been especially tailored to minimize on-state  
resistance, provide superior switching performance, and  
withstand high energy pulses in the avalanche and  
commutation modes. These devices are particularly suited  
for low voltage applications such as automotive, DC/DC  
converters, PWM motor controls, and other battery  
powered circuits where fast switching, low in-line power  
loss, and resistance to transients are needed.  
Critical DC electrical parameters specified at elevated  
temperature.  
Rugged internal source-drain diode can eliminate the need  
for an external Zener diode transient suppressor.  
175°C maximum junction temperature rating.  
High density cell design for extremely low RDS(ON)  
.
TO-220 and TO-263 (D2PAK) package for both through hole  
and surface mount applications.  
________________________________________________________________________________  
D
G
S
Absolute Maximum Ratings  
Symbol Parameter  
TC = 25°C unless otherwise noted  
NDP6060  
NDB6060  
Units  
V
Drain-Source Voltage  
60  
60  
VDSS  
VDGR  
V
Drain-Gate Voltage (RGS < 1 MW)  
VGSS  
Gate-Source Voltage - Continuous  
± 20  
± 40  
48  
V
- Nonrepetitive (tP < 50 µs)  
Drain Current - Continuous  
Tc=25oC  
TC=100oC  
A
ID  
32  
- Continuous  
- Pulsed  
144  
PD  
Total Power Dissipation @ TC = 25°C  
Derate above 25°C  
100  
0.67  
W
W/°C  
°C  
Operating and Storage Temperature Range  
-65 to 175  
275  
TJ,TSTG  
TL  
Maximum lead temperature for soldering purposes,  
1/8" from case for 5 seconds  
°C  
© 1997 Fairchild Semiconductor Corporation  
NDP6060 Rev. B1 / NDB6060 Rev. C  
1234567...12

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