生命周期: | Obsolete | 零件包装代码: | TO-220AB |
包装说明: | FLANGE MOUNT, R-PSFM-T3 | 针数: | 3 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
风险等级: | 5.33 | 雪崩能效等级(Eas): | 200 mJ |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 60 V |
最大漏极电流 (ID): | 48 A | 最大漏源导通电阻: | 0.025 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JEDEC-95代码: | TO-220AB |
JESD-30 代码: | R-PSFM-T3 | JESD-609代码: | e3 |
元件数量: | 1 | 端子数量: | 3 |
工作模式: | ENHANCEMENT MODE | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | FLANGE MOUNT |
极性/信道类型: | N-CHANNEL | 最大脉冲漏极电流 (IDM): | 144 A |
认证状态: | Not Qualified | 表面贴装: | NO |
端子面层: | MATTE TIN | 端子形式: | THROUGH-HOLE |
端子位置: | SINGLE | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
NDP6060L | FAIRCHILD |
获取价格 |
N-Channel Logic Level Enhancement Mode Field Effect Transistor | |
NDP6060L | ONSEMI |
获取价格 |
N 沟道逻辑电平增强型场效应晶体管 60V,48A,25mΩ | |
NDP6060L/J69Z | TI |
获取价格 |
48A, 60V, 0.025ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220, TO-220, 3 PIN | |
NDP6060L_NL | FAIRCHILD |
获取价格 |
Power Field-Effect Transistor, 48A I(D), 60V, 0.025ohm, 1-Element, N-Channel, Silicon, Met | |
NDP6060LJ69Z | FAIRCHILD |
获取价格 |
Power Field-Effect Transistor, 48A I(D), 60V, 0.025ohm, 1-Element, N-Channel, Silicon, Met | |
NDP6060LS62Z | FAIRCHILD |
获取价格 |
Power Field-Effect Transistor, 48A I(D), 60V, 0.025ohm, 1-Element, N-Channel, Silicon, Met | |
NDP6060S62Z | FAIRCHILD |
获取价格 |
Power Field-Effect Transistor, 48A I(D), 60V, 0.025ohm, 1-Element, N-Channel, Silicon, Met | |
NDP606A | NSC |
获取价格 |
N-Channel Enhancement Mode Power Fleid Effect Transistor | |
NDP606AL | TI |
获取价格 |
TRANSISTOR 48 A, 60 V, 0.025 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, FET General Purp | |
NDP606B | NSC |
获取价格 |
N-Channel Enhancement Mode Power Fleid Effect Transistor |