5秒后页面跳转
捷配首页

Datasheet > NDP6060_NL
NDP6060_NL PDF预览

NDP6060_NL

更新时间： 2024-11-25 21:03:23
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 局域网开关脉冲晶体管
页数 文件大小 规格书
12页 356K
描述
Power Field-Effect Transistor, 48A I(D), 60V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE, TO-220, 3 PIN

阅读下载

中文翻译

获取价格

NDP6060_NL 技术参数

生命周期：Obsolete零件包装代码：TO-220AB
包装说明：FLANGE MOUNT, R-PSFM-T3针数：3
Reach Compliance Code：unknownECCN代码：EAR99
风险等级：5.33雪崩能效等级（Eas）：200 mJ
配置：SINGLE WITH BUILT-IN DIODE最小漏源击穿电压：60 V
最大漏极电流 (ID)：48 A最大漏源导通电阻：0.025 Ω
FET 技术：METAL-OXIDE SEMICONDUCTORJEDEC-95代码：TO-220AB
JESD-30 代码：R-PSFM-T3JESD-609代码：e3
元件数量：1端子数量：3
工作模式：ENHANCEMENT MODE封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：FLANGE MOUNT
极性/信道类型：N-CHANNEL最大脉冲漏极电流 (IDM)：144 A
认证状态：Not Qualified表面贴装：NO
端子面层：MATTE TIN端子形式：THROUGH-HOLE
端子位置：SINGLE晶体管应用：SWITCHING
晶体管元件材料：SILICONBase Number Matches：1

NDP6060_NL 数据手册

 浏览型号NDP6060_NL的Datasheet PDF文件第2页浏览型号NDP6060_NL的Datasheet PDF文件第3页浏览型号NDP6060_NL的Datasheet PDF文件第4页浏览型号NDP6060_NL的Datasheet PDF文件第5页浏览型号NDP6060_NL的Datasheet PDF文件第6页浏览型号NDP6060_NL的Datasheet PDF文件第7页 
March 1996  
NDP6060 / NDB6060  
N-Channel Enhancement Mode Field Effect Transistor  
General Description  
Features  
48A, 60V. RDS(ON) = 0.025W @ VGS=10V.  
These N-Channel enhancement mode power field effect  
transistors are produced using Fairchild's proprietary, high  
cell density, DMOS technology. This very high density  
process has been especially tailored to minimize on-state  
resistance, provide superior switching performance, and  
withstand high energy pulses in the avalanche and  
commutation modes. These devices are particularly suited  
for low voltage applications such as automotive, DC/DC  
converters, PWM motor controls, and other battery  
powered circuits where fast switching, low in-line power  
loss, and resistance to transients are needed.  
Critical DC electrical parameters specified at elevated  
temperature.  
Rugged internal source-drain diode can eliminate the need  
for an external Zener diode transient suppressor.  
175°C maximum junction temperature rating.  
High density cell design for extremely low RDS(ON)  
.
TO-220 and TO-263 (D2PAK) package for both through hole  
and surface mount applications.  
________________________________________________________________________________  
D
G
S
Absolute Maximum Ratings  
Symbol Parameter  
TC = 25°C unless otherwise noted  
NDP6060  
NDB6060  
Units  
V
Drain-Source Voltage  
60  
60  
VDSS  
VDGR  
V
Drain-Gate Voltage (RGS < 1 MW)  
VGSS  
Gate-Source Voltage - Continuous  
± 20  
± 40  
48  
V
- Nonrepetitive (tP < 50 µs)  
Drain Current - Continuous  
Tc=25oC  
TC=100oC  
A
ID  
32  
- Continuous  
- Pulsed  
144  
PD  
Total Power Dissipation @ TC = 25°C  
Derate above 25°C  
100  
0.67  
W
W/°C  
°C  
Operating and Storage Temperature Range  
-65 to 175  
275  
TJ,TSTG  
TL  
Maximum lead temperature for soldering purposes,  
1/8" from case for 5 seconds  
°C  
© 1997 Fairchild Semiconductor Corporation  
NDP6060 Rev. B1 / NDB6060 Rev. C  
1234567...12

中文翻译

下载PDF

与NDP6060_NL相关器件

型号 品牌 获取价格 描述 数据表
NDP6060L FAIRCHILD

获取价格

 		N-Channel Logic Level Enhancement Mode Field Effect Transistor
NDP6060L ONSEMI

获取价格

 		N 沟道逻辑电平增强型场效应晶体管 60V，48A，25mΩ
NDP6060L/J69Z TI

获取价格

 		48A, 60V, 0.025ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220, TO-220, 3 PIN
NDP6060L_NL FAIRCHILD

获取价格

 		Power Field-Effect Transistor, 48A I(D), 60V, 0.025ohm, 1-Element, N-Channel, Silicon, Met
NDP6060LJ69Z FAIRCHILD

获取价格

 		Power Field-Effect Transistor, 48A I(D), 60V, 0.025ohm, 1-Element, N-Channel, Silicon, Met
NDP6060LS62Z FAIRCHILD

获取价格

 		Power Field-Effect Transistor, 48A I(D), 60V, 0.025ohm, 1-Element, N-Channel, Silicon, Met
NDP6060S62Z FAIRCHILD

获取价格

 		Power Field-Effect Transistor, 48A I(D), 60V, 0.025ohm, 1-Element, N-Channel, Silicon, Met
NDP606A NSC

获取价格

 		N-Channel Enhancement Mode Power Fleid Effect Transistor
NDP606AL TI

获取价格

 		TRANSISTOR 48 A, 60 V, 0.025 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, FET General Purp
NDP606B NSC

获取价格

 		N-Channel Enhancement Mode Power Fleid Effect Transistor

与NDP6060_NL相关文章

您还可以找


热门产品
PCB打样/小批量
铝基板
BOM智能配单
PCBA制造
钣金
精密CNC
模具注塑
薄膜开关
精选活动
PCBA打样特惠
四六层板品质升级
铝基板品质升级
一体化电子制造
DFM下载
服务支持
企业认证
产品展示
工厂展示
工艺能力
积分商城
关于捷配
捷配简介
企业文化
公司动态
人才招聘
联系我们
帮助中心
下单流程
付款流程
开票流程
常见问题
全球PCB制造服务专线 400-613-0088

工作时间：9:00-21:00

CEO邮箱：ceo@jiepei.com

投诉邮箱：tousu@jiepei.com

捷配网-微信公众号 微信公众号
捷配网-微信公众号 抖音公众号
资质认证：
合作快递：
支付方式：
Copyright © 2024 Jiepei.com Inc. All Rights Reserved. 版权所有:杭州捷配信息科技有限公司 浙公网安备 33010502006866号 浙ICP备10014259号-119 营业执照ICP证