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NDC631N PDF预览

NDC631N

更新时间: 2024-10-25 22:29:07
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 晶体小信号场效应晶体管开关光电二极管
页数 文件大小 规格书
10页 247K
描述
N-Channel Logic Level Enhancement Mode Field Effect Transistor

NDC631N 技术参数

是否Rohs认证:符合生命周期:Obsolete
零件包装代码:SOT包装说明:SUPERSOT-6
针数:6Reach Compliance Code:unknown
ECCN代码:EAR99风险等级:5.71
Is Samacsys:N配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:20 V最大漏极电流 (Abs) (ID):4.1 A
最大漏极电流 (ID):4.1 A最大漏源导通电阻:0.06 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-30 代码:R-PDSO-G6
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:6
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):1.6 W
认证状态:Not Qualified子类别:FET General Purpose Power
表面贴装:YES端子面层:Matte Tin (Sn)
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

NDC631N 数据手册

 浏览型号NDC631N的Datasheet PDF文件第2页浏览型号NDC631N的Datasheet PDF文件第3页浏览型号NDC631N的Datasheet PDF文件第4页浏览型号NDC631N的Datasheet PDF文件第5页浏览型号NDC631N的Datasheet PDF文件第6页浏览型号NDC631N的Datasheet PDF文件第7页 
July 1996  
NDC631N  
N-Channel Logic Level Enhancement Mode Field Effect Transistor  
General Description  
Features  
4.1 A, 20 V. RDS(ON) = 0.06 W @ VGS = 4.5 V  
RDS(ON) = 0.075 W @ VGS =2.7 V.  
These N-Channel logic level enhancement mode power field  
effect transistors are produced using Fairchild's proprietary,  
high cell density, DMOS technology. This very high density  
process is tailored to minimize on-state resistance. These  
devices are particularly suited for low voltage applications in  
notebook computers, portable phones, PCMICA cards, and  
other battery powered circuits where fast switching, and low  
in-line power loss are needed in a very small outline surface  
mount package.  
Proprietary SuperSOTTM-6 package design using copper  
lead frame for superior thermal and electrical capabilities.  
High density cell design for extremely low RDS(ON)  
.
Exceptional on-resistance and maximum DC current  
capability.  
____________________________________________________________________________________________  
4
3
2
5
6
1
Absolute Maximum Ratings TA = 25°C unless otherwise note  
Symbol Parameter  
NDC631N  
Units  
Drain-Source Voltage  
20  
V
V
A
VDSS  
VGSS  
ID  
Gate-Source Voltage - Continuous  
Drain Current - Continuous  
- Pulsed  
8
4.1  
(Note 1a)  
(Note 1a)  
15  
Maximum Power Dissipation  
1.6  
W
PD  
(Note 1b)  
(Note 1c)  
1
0.8  
Operating and Storage Temperature Range  
-55 to 150  
°C  
TJ,TSTG  
THERMAL CHARACTERISTICS  
Thermal Resistance, Junction-to-Ambient  
Thermal Resistance, Junction-to-Case  
(Note 1a)  
(Note 1)  
78  
30  
°C/W  
°C/W  
R
JA  
q
R
JC  
q
© 1997 Fairchild Semiconductor Corporation  
NDC631N Rev.D1  

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