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NDC651N_NL

更新时间: 2024-11-18 20:08:35
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 开关光电二极管晶体管
页数 文件大小 规格书
7页 67K
描述
Small Signal Field-Effect Transistor, 3.2A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SUPERSOT-6

NDC651N_NL 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:SOT包装说明:SUPERSOT-6
针数:6Reach Compliance Code:not_compliant
ECCN代码:EAR99风险等级:5.76
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:30 V
最大漏极电流 (Abs) (ID):3.2 A最大漏极电流 (ID):3.2 A
最大漏源导通电阻:0.06 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:R-PDSO-G6JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:6工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):1.6 W认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:YES
端子面层:Matte Tin (Sn)端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

NDC651N_NL 数据手册

 浏览型号NDC651N_NL的Datasheet PDF文件第2页浏览型号NDC651N_NL的Datasheet PDF文件第3页浏览型号NDC651N_NL的Datasheet PDF文件第4页浏览型号NDC651N_NL的Datasheet PDF文件第5页浏览型号NDC651N_NL的Datasheet PDF文件第6页浏览型号NDC651N_NL的Datasheet PDF文件第7页 
March 1996  
NDC651N  
N-Channel Logic Level Enhancement Mode Field Effect Transistor  
General Description  
Features  
These N-Channel logic level enhancement mode power field  
effect transistors are produced using Fairchild's proprietary,  
high cell density, DMOS technology. This very high density  
process is tailored to minimize on-state resistance. These  
devices are particularly suited for low voltage applications in  
notebook computers, portable phones, PCMICA cards, and  
other battery powered circuits where fast switching, and low  
in-line power loss are needed in a very small outline surface  
mount package.  
3.2A, 30V. RDS(ON) = 0.09W @ VGS = 4.5V  
RDS(ON) = 0.06W @ VGS = 10V.  
Proprietary SuperSOTTM-6 package design using copper  
lead frame for superior thermal and electrical capabilities.  
High density cell design for extremely low RDS(ON)  
.
Exceptional on-resistance and maximum DC current  
capability.  
____________________________________________________________________________________________  
4
3
2
5
6
1
Absolute Maximum Ratings TA = 25°C unless otherwise note  
Symbol Parameter  
NDC651N  
Units  
Drain-Source Voltage  
30  
V
V
A
VDSS  
VGSS  
ID  
Gate-Source Voltage - Continuous  
Drain Current - Continuous  
- Pulsed  
20  
3.2  
(Note 1a)  
15  
Maximum Power Dissipation  
(Note 1a)  
(Note 1b)  
1.6  
W
PD  
1
(Note 1c)  
0.8  
Operating and Storage Temperature Range  
-55 to 150  
°C  
TJ,TSTG  
THERMAL CHARACTERISTICS  
Thermal Resistance, Junction-to-Ambient  
Thermal Resistance, Junction-to-Case  
(Note 1a)  
(Note 1)  
78  
30  
°C/W  
°C/W  
R
JA  
q
R
JC  
q
© 1997 Fairchild Semiconductor Corporation  
NDC651N Rev. D1  

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