NDC652

更新时间： 2024-11-17 22:29:07

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		晶体晶体管场效应晶体管
页数	文件大小	规格书
10页	248K
描述
P-Channel Logic Level Enhancement Mode Field Effect Transistor

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

NDC652 数据手册

March 1996

NDC652P

P-Channel Logic Level Enhancement Mode Field Effect Transistor

General Description

Features

-2.4A, -30V. R_DS(ON)= 0.18W @ V_GS= -4.5V

R_DS(ON)= 0.11W @ V_GS= -10V.

These P-Channel logic level enhancement mode power

field effect transistors are produced using Fairchild's

proprietary, high cell density, DMOS technology. This

very high density process is especially tailored to

minimize on-state resistance. These devices are

particularly suited for low voltage applications such as

notebook computer power management and other

battery powered circuits where fast high-side switching,

and low in-line power loss are needed in a very small

outline surface mount package.

Proprietary SuperSOT^TM-6 package design using copper

lead frame for superior thermal and electrical capabilities.

High density cell design for extremely low R_DS(ON)

Exceptional on-resistance and maximum DC current

capability.

____________________________________________________________________________________________

Absolute Maximum Ratings

Symbol Parameter

T_A= 25°C unless otherwise noted

NDC652P

-30

Units

Drain-Source Voltage

V_DSS

V_GSS

I_D

Gate-Source Voltage - Continuous

-20

Drain Current - Continuous

- Pulsed

-2.4

-10

P_D

Maximum Power Dissipation

(Note 1a)

(Note 1b)

1.6

(Note 1c)

0.8

T_J,T_STGOperating and Storage Temperature Range

-55 to 150

°C

THERMAL CHARACTERISTICS

Thermal Resistance, Junction-to-Ambient (Note 1a)

°C/W

Thermal Resistance, Junction-to-Case

(Note 1)

NDC652P Rev. D1

12 3 4 5 6 7...10

中文翻译

下载PDF

与NDC652相关器件

型号	品牌	获取价格	描述	数据表
NDC652P	TI	获取价格	2400mA, 30V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
NDC652P	FAIRCHILD	获取价格	P-Channel Logic Level Enhancement Mode Field Effect Transistor
NDC652P/S62Z	TI	获取价格	2400mA, 30V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
NDC652P_NL	FAIRCHILD	获取价格	Small Signal Field-Effect Transistor, 2.4A I(D), 30V, 1-Element, P-Channel, Silicon, Metal
NDC652PD84Z	FAIRCHILD	获取价格	Small Signal Field-Effect Transistor, 2.4A I(D), 30V, 1-Element, P-Channel, Silicon, Metal
NDC652PL99Z	FAIRCHILD	获取价格	Small Signal Field-Effect Transistor, 2.4A I(D), 30V, 1-Element, P-Channel, Silicon, Metal
NDC652PS62Z	FAIRCHILD	获取价格	Small Signal Field-Effect Transistor, 2.4A I(D), 30V, 1-Element, P-Channel, Silicon, Metal
NDC652PX	TI	获取价格	2400mA, 30V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, SUPERSOT-6
NDC7001	FAIRCHILD	获取价格	Dual N & P-Channel Enhancement Mode Field Effect Transistor
NDC7001C	TI	获取价格	510mA, 50V, 2 CHANNEL,N AND P-CHANNEL, Si, SMALL SIGNAL, MOSFET