生命周期: | Obsolete | 包装说明: | SMALL OUTLINE, R-PDSO-G6 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
风险等级: | 5.74 | 配置: | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
最小漏源击穿电压: | 50 V | 最大漏极电流 (ID): | 0.51 A |
最大漏源导通电阻: | 2 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JESD-30 代码: | R-PDSO-G6 | 元件数量: | 2 |
端子数量: | 6 | 工作模式: | ENHANCEMENT MODE |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
极性/信道类型: | N-CHANNEL AND P-CHANNEL | 功耗环境最大值: | 1.4 W |
认证状态: | Not Qualified | 表面贴装: | YES |
端子形式: | GULL WING | 端子位置: | DUAL |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
NDC7001C/L99Z | TI |
获取价格 |
510mA, 50V, 2 CHANNEL,N AND P-CHANNEL, Si, SMALL SIGNAL, MOSFET | |
NDC7001C/S62Z | TI |
获取价格 |
510mA, 50V, 2 CHANNEL,N AND P-CHANNEL, Si, SMALL SIGNAL, MOSFET | |
NDC7001CL99Z | FAIRCHILD |
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Small Signal Field-Effect Transistor, 0.51A I(D), 50V, 2-Element, N-Channel and P-Channel, | |
NDC7001CS62Z | FAIRCHILD |
获取价格 |
Small Signal Field-Effect Transistor, 0.51A I(D), 50V, 2-Element, N-Channel and P-Channel, | |
NDC7002 | FAIRCHILD |
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Dual N-Channel Enhancement Mode Field Effect Transistor | |
NDC7002N | ONSEMI |
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双 N 沟道增强型场效应晶体管,50V,0.51A,2Ω | |
NDC7002N | FAIRCHILD |
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Dual N-Channel Enhancement Mode Field Effect Transistor | |
NDC7002N | TI |
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510mA, 50V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET | |
NDC7002N | UMW |
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漏源电压(Vdss):50V;持续漏极电流(Id)(在25°C时):0.51A;栅极-源极 | |
NDC7002N/D87Z | TI |
获取价格 |
510mA, 50V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |