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NDC7003P PDF预览

NDC7003P

更新时间: 2024-11-17 22:29:07
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 晶体小信号场效应晶体管开关光电二极管PC
页数 文件大小 规格书
10页 260K
描述
Dual P-Channel Enhancement Mode Field Effect Transistor

NDC7003P 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Transferred零件包装代码:SSOT
包装说明:SMALL OUTLINE, R-PDSO-G6针数:6
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.21.00.95风险等级:5.32
Samacsys Confidence:2Samacsys Status:Released
Samacsys PartID:1049739Samacsys Pin Count:6
Samacsys Part Category:MOSFET (P-Channel)Samacsys Package Category:SOT23 (6-Pin)
Samacsys Footprint Name:SuperSOT-6Samacsys Released Date:2018-03-02 17:36:14
Is Samacsys:N配置:SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
最小漏源击穿电压:60 V最大漏极电流 (Abs) (ID):0.34 A
最大漏极电流 (ID):0.34 A最大漏源导通电阻:5 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-30 代码:R-PDSO-G6
JESD-609代码:e3湿度敏感等级:1
元件数量:2端子数量:6
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性/信道类型:P-CHANNEL最大功率耗散 (Abs):0.96 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:YES端子面层:Matte Tin (Sn)
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

NDC7003P 数据手册

 浏览型号NDC7003P的Datasheet PDF文件第2页浏览型号NDC7003P的Datasheet PDF文件第3页浏览型号NDC7003P的Datasheet PDF文件第4页浏览型号NDC7003P的Datasheet PDF文件第5页浏览型号NDC7003P的Datasheet PDF文件第6页浏览型号NDC7003P的Datasheet PDF文件第7页 
March 1996  
NDC7003P  
Dual P-Channel Enhancement Mode Field Effect Transistor  
General Description  
Features  
These dual P-Channel enhancement mode power field  
effect transistors are produced using Fairchild's  
proprietary, high cell density, DMOS technology. This  
very high density process has been designed to minimize  
on-state resistance, provide rugged and reliable  
performance and fast switching. This product is  
particularly suited to low voltage applications requiring a  
low current high side switch.  
-0.34A, -50V. RDS(ON)= 5W @ VGS=-10V.  
High density cell design for low RDS(ON)  
.
Proprietary SuperSOTTM-6 package design using copper  
lead frame for superior thermal and electrical capabilities.  
High saturation current.  
____________________________________________________________________________________________  
3
2
1
4
5
6
SOT-6 (SuperSOTTM-6)  
Absolute Maximum RatingsTA = 25°C unless otherwise noted  
Symbol Parameter  
NDC7003P  
Units  
Drain-Source Voltage  
-50  
V
V
A
VDSS  
VGSS  
ID  
Gate-Source Voltage - Continuous  
Drain Current - Continuous  
- Pulsed  
-20  
-0.34  
-1  
(Note 1a)  
Maximum Power Dissipation  
(Note 1a)  
(Note 1b)  
0.96  
W
PD  
0.9  
(Note 1c)  
0.7  
Operating and Storage Temperature Range  
-55 to 150  
°C  
TJ,TSTG  
THERMAL CHARACTERISTICS  
Thermal Resistance, Junction-to-Ambient  
Thermal Resistance, Junction-to-Case  
(Note 1a)  
(Note 1)  
130  
60  
°C/W  
°C/W  
R
JA  
q
R
JC  
q
© 1997 Fairchild Semiconductor Corporation  

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