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NDC7003P

更新时间： 2024-11-19 11:15:55
品牌 Logo 应用领域
安森美 - ONSEMI PC开关光电二极管晶体管场效应晶体管
页数 文件大小 规格书
6页 281K
描述
双 P 沟道增强型场效应晶体管 -60V，-0.34A，5Ω

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中文翻译

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NDC7003P 技术参数

是否无铅： 不含铅生命周期：Active
包装说明：SMALL OUTLINE, R-PDSO-G6Reach Compliance Code：compliant
ECCN代码：EAR99HTS代码：8541.21.00.95
Factory Lead Time：38 weeks风险等级：0.97
Samacsys Confidence：2Samacsys Status：Released
Samacsys PartID：1049739Samacsys Pin Count：6
Samacsys Part Category：MOSFET (P-Channel)Samacsys Package Category：SOT23 (6-Pin)
Samacsys Footprint Name：SuperSOT-6Samacsys Released Date：2018-03-02 17:36:14
Is Samacsys：N配置：SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
最小漏源击穿电压：60 V最大漏极电流 (Abs) (ID)：0.34 A
最大漏极电流 (ID)：0.34 A最大漏源导通电阻：5 Ω
FET 技术：METAL-OXIDE SEMICONDUCTORJESD-30 代码：R-PDSO-G6
JESD-609代码：e3湿度敏感等级：1
元件数量：2端子数量：6
工作模式：ENHANCEMENT MODE最高工作温度：150 °C
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE峰值回流温度（摄氏度）：NOT SPECIFIED
极性/信道类型：P-CHANNEL最大功率耗散 (Abs)：0.96 W
认证状态：Not Qualified子类别：Other Transistors
表面贴装：YES端子面层：Tin (Sn)
端子形式：GULL WING端子位置：DUAL
处于峰值回流温度下的最长时间：NOT SPECIFIED晶体管应用：SWITCHING
晶体管元件材料：SILICONBase Number Matches：1

NDC7003P 数据手册

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DATA SHEET  
www.onsemi.com  
MOSFET - Dual P-Channel,  
POWERTRENCH)  
D2  
S1  
D1  
G2  
S2  
G1  
NDC7003P  
TSOT23 6−Lead  
CASE 419BL  
General Description  
These dual P−Channel Enhancement Mode Power Field Effect  
Transistors are produced using onsemi’s proprietary Trench  
Technology. This very high density process has been designed to  
minimize on−state resistance, provide rugged and reliable  
performance and fast switching. This product is particularly suited to  
low voltage applications requiring a low current high side switch.  
MARKING DIAGRAM  
XXX MG  
G
1
Features  
• −0.34 A, −60 V  
R
R
= 5 W @ V = −10 V  
GS  
DS(ON)  
XXX = Specific Device Code  
= 7 W @ V = −4.5 V  
DS(ON)  
GS  
M
= Date Code  
• Low Gate Charge  
G
= Pb−Free Package  
(Note: Microdot may be in either location)  
• Fast Switching Speed  
• High Performance Trench Technology for Low R  
DS(ON)  
• SUPERSOTt−6 Package: Small Footprint (72% smaller than  
standard SO−8); Low Profile (1 mm Thick)  
• This is a Pb−Free Device  
PINOUT  
4
5
6
3
2
1
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted)  
Symbol  
Parameter  
Drain−Source Voltage  
Gate−Source Voltage  
Drain Current  
Ratings  
−60  
Unit  
V
V
DSS  
V
GSS  
20  
V
I
D
A
SOT−6 (SUPERSOTt−6)  
− Continuous (Note 1a)  
− Pulsed  
−0.34  
−1  
P
D
Power Dissipation for Single  
Operation  
W
ORDERING INFORMATION  
(Note 1a)  
(Note 1b)  
(Note 1c)  
0.96  
0.9  
0.7  
†
Shipping  
Package  
Device  
3000 /  
Tape & Reel  
TSOT−23−6  
(Pb−free)  
NDC7003P  
T , T  
Operating and Storage  
Temperature Range  
−55 to +150  
°C  
J
STG  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specification  
Brochure, BRD8011/D.  
Stresses exceeding those listed in the Maximum Ratings table may damage the  
device. If any of these limits are exceeded, device functionality should not be  
assumed, damage may occur and reliability may be affected.  
THERMAL CHARACTERISTICS  
Symbol  
Parameter  
Ratings  
Unit  
RθJA  
Thermal Resistance,  
Junction to Ambient (Note 1a)  
130  
°C/W  
RθJC  
Thermal Resistance,  
Junction to Case (Note 1)  
60  
© Semiconductor Components Industries, LLC, 2002  
1
Publication Order Number:  
December, 2021 − Rev. 3  
NDC7003P/D  
123456

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