5秒后页面跳转
NDC632P PDF预览

NDC632P

更新时间: 2024-10-25 22:29:07
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 晶体小信号场效应晶体管开关光电二极管
页数 文件大小 规格书
10页 255K
描述
P-Channel Logic Level Enhancement Mode Field Effect Transistor

NDC632P 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:SOT包装说明:SUPERSOT-6
针数:6Reach Compliance Code:unknown
ECCN代码:EAR99风险等级:5.73
Is Samacsys:N配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:20 V最大漏极电流 (Abs) (ID):2.7 A
最大漏极电流 (ID):2.7 A最大漏源导通电阻:0.14 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-30 代码:R-PDSO-G6
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:6
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性/信道类型:P-CHANNEL最大功率耗散 (Abs):1.6 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:YES端子面层:Matte Tin (Sn)
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

NDC632P 数据手册

 浏览型号NDC632P的Datasheet PDF文件第2页浏览型号NDC632P的Datasheet PDF文件第3页浏览型号NDC632P的Datasheet PDF文件第4页浏览型号NDC632P的Datasheet PDF文件第5页浏览型号NDC632P的Datasheet PDF文件第6页浏览型号NDC632P的Datasheet PDF文件第7页 
June1996  
NDC632P  
P-Channel Logic Level Enhancement Mode Field Effect Transistor  
General Description  
Features  
These P-Channel logic level enhancement mode  
power field effect transistors are produced using  
Fairchild's proprietary, high cell density, DMOS  
technology. This very high density process is  
especially tailored to minimize on-state resistance.  
These devices are particularly suited for low voltage  
applications such as notebook computer power  
management and other battery powered circuits  
where fast high-side switching, and low in-line power  
loss are needed in a very small outline surface  
mount package.  
-2.7A, -20V. RDS(ON) = 0.14W @ VGS = -4.5V  
RDS(ON) = 0.2W @ VGS = -2.7V.  
Proprietary SuperSOTTM-6 package design using copper  
lead frame for superior thermal and electrical capabilities.  
High density cell design for extremely low RDS(ON)  
.
Exceptional on-resistance and maximum DC current  
capability.  
___________________________________________________________________________________________  
4
3
2
1
5
6
SuperSOTTM-6  
Absolute Maximum Ratings  
Symbol Parameter  
TA = 25°C unless otherwise noted  
NDC632P  
Units  
VDSS  
VGSS  
ID  
Drain-Source Voltage  
-20  
-8  
V
V
A
Gate-Source Voltage - Continuous  
Drain Current - Continuous  
- Pulsed  
-2.7  
-10  
Maximum Power Dissipation  
(Note 1a)  
(Note 1b)  
1.6  
W
PD  
1
(Note 1c)  
0.8  
TJ,TSTG Operating and Storage Temperature Range  
-55 to 150  
°C  
THERMAL CHARACTERISTICS  
Thermal Resistance, Junction-to-Ambient  
R
(Note 1a)  
(Note 1)  
78  
30  
°C/W  
°C/W  
JA  
q
Thermal Resistance, Junction-to-Case  
R
JC  
q
© 1997 Fairchild Semiconductor Corporation  
NDC632P Rev. B1  

与NDC632P相关器件

型号 品牌 获取价格 描述 数据表
NDC632P/D87Z TI

获取价格

2700mA, 20V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
NDC632P/L99Z TI

获取价格

2700mA, 20V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
NDC632P/S62Z TI

获取价格

2700mA, 20V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
NDC632P_NL FAIRCHILD

获取价格

Small Signal Field-Effect Transistor, 2.7A I(D), 20V, 1-Element, P-Channel, Silicon, Metal
NDC632PD84Z FAIRCHILD

获取价格

Small Signal Field-Effect Transistor, 2.7A I(D), 20V, 1-Element, P-Channel, Silicon, Metal
NDC632PD87Z FAIRCHILD

获取价格

Small Signal Field-Effect Transistor, 2.7A I(D), 20V, 1-Element, P-Channel, Silicon, Metal
NDC632PL99Z FAIRCHILD

获取价格

Small Signal Field-Effect Transistor, 2.7A I(D), 20V, 1-Element, P-Channel, Silicon, Metal
NDC651N FAIRCHILD

获取价格

N-Channel Logic Level Enhancement Mode Field Effect Transistor
NDC651N TI

获取价格

3200mA, 30V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
NDC651N/D87Z TI

获取价格

暂无描述