生命周期: | Obsolete | 零件包装代码: | SOT |
包装说明: | SMALL OUTLINE, R-PDSO-G6 | 针数: | 6 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
风险等级: | 5.76 | 配置: | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压: | 20 V | 最大漏极电流 (ID): | 2.7 A |
最大漏源导通电阻: | 0.14 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JESD-30 代码: | R-PDSO-G6 | 元件数量: | 1 |
端子数量: | 6 | 工作模式: | ENHANCEMENT MODE |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
极性/信道类型: | P-CHANNEL | 认证状态: | Not Qualified |
表面贴装: | YES | 端子形式: | GULL WING |
端子位置: | DUAL | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
NDC632PL99Z | FAIRCHILD |
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Small Signal Field-Effect Transistor, 2.7A I(D), 20V, 1-Element, P-Channel, Silicon, Metal | |
NDC651N | FAIRCHILD |
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N-Channel Logic Level Enhancement Mode Field Effect Transistor | |
NDC651N | TI |
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3200mA, 30V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET | |
NDC651N/D87Z | TI |
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暂无描述 | |
NDC651N/L99Z | TI |
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3200mA, 30V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET | |
NDC651N_NL | FAIRCHILD |
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Small Signal Field-Effect Transistor, 3.2A I(D), 30V, 1-Element, N-Channel, Silicon, Metal | |
NDC651ND87Z | FAIRCHILD |
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Small Signal Field-Effect Transistor, 3.2A I(D), 30V, 1-Element, N-Channel, Silicon, Metal | |
NDC651NL99Z | FAIRCHILD |
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Small Signal Field-Effect Transistor, 3.2A I(D), 30V, 1-Element, N-Channel, Silicon, Metal | |
NDC651NX | TI |
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3200mA, 30V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, SUPERSOT-6 | |
NDC652 | FAIRCHILD |
获取价格 |
P-Channel Logic Level Enhancement Mode Field Effect Transistor |