NDC632

更新时间： 2024-10-25 22:29:07

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		晶体晶体管场效应晶体管
页数	文件大小	规格书
10页	255K
描述
P-Channel Logic Level Enhancement Mode Field Effect Transistor

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数据手册

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NDC632 数据手册

June1996

NDC632P

P-Channel Logic Level Enhancement Mode Field Effect Transistor

General Description

Features

These P-Channel logic level enhancement mode

power field effect transistors are produced using

Fairchild's proprietary, high cell density, DMOS

technology. This very high density process is

especially tailored to minimize on-state resistance.

These devices are particularly suited for low voltage

applications such as notebook computer power

management and other battery powered circuits

where fast high-side switching, and low in-line power

loss are needed in a very small outline surface

mount package.

-2.7A, -20V. R_DS(ON)= 0.14W @ V_GS= -4.5V

R_DS(ON)= 0.2W @ V_GS= -2.7V.

Proprietary SuperSOT^TM-6 package design using copper

lead frame for superior thermal and electrical capabilities.

High density cell design for extremely low R_DS(ON)

Exceptional on-resistance and maximum DC current

capability.

___________________________________________________________________________________________

SuperSOT^TM-6

Absolute Maximum Ratings

Symbol Parameter

T_A= 25°C unless otherwise noted

NDC632P

Units

V_DSS

V_GSS

I_D

Drain-Source Voltage

-20

-8

Gate-Source Voltage - Continuous

Drain Current - Continuous

- Pulsed

-2.7

-10

Maximum Power Dissipation

(Note 1a)

(Note 1b)

1.6

P_D

(Note 1c)

0.8

T_J,T_STGOperating and Storage Temperature Range

-55 to 150

°C

THERMAL CHARACTERISTICS

Thermal Resistance, Junction-to-Ambient

(Note 1a)

(Note 1)

°C/W

Thermal Resistance, Junction-to-Case

NDC632P Rev. B1

12 3 4 5 6 7...10

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与NDC632相关器件

型号	品牌	获取价格	描述	数据表
NDC632P	FAIRCHILD	获取价格	P-Channel Logic Level Enhancement Mode Field Effect Transistor
NDC632P/D87Z	TI	获取价格	2700mA, 20V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
NDC632P/L99Z	TI	获取价格	2700mA, 20V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
NDC632P/S62Z	TI	获取价格	2700mA, 20V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
NDC632P_NL	FAIRCHILD	获取价格	Small Signal Field-Effect Transistor, 2.7A I(D), 20V, 1-Element, P-Channel, Silicon, Metal
NDC632PD84Z	FAIRCHILD	获取价格	Small Signal Field-Effect Transistor, 2.7A I(D), 20V, 1-Element, P-Channel, Silicon, Metal
NDC632PD87Z	FAIRCHILD	获取价格	Small Signal Field-Effect Transistor, 2.7A I(D), 20V, 1-Element, P-Channel, Silicon, Metal
NDC632PL99Z	FAIRCHILD	获取价格	Small Signal Field-Effect Transistor, 2.7A I(D), 20V, 1-Element, P-Channel, Silicon, Metal
NDC651N	FAIRCHILD	获取价格	N-Channel Logic Level Enhancement Mode Field Effect Transistor
NDC651N	TI	获取价格	3200mA, 30V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET