生命周期: | Obsolete | 零件包装代码: | SOT |
包装说明: | SMALL OUTLINE, R-PDSO-G6 | 针数: | 6 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
风险等级: | 5.74 | Is Samacsys: | N |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 20 V |
最大漏极电流 (ID): | 4.1 A | 最大漏源导通电阻: | 0.06 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JESD-30 代码: | R-PDSO-G6 |
元件数量: | 1 | 端子数量: | 6 |
工作模式: | ENHANCEMENT MODE | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 极性/信道类型: | N-CHANNEL |
认证状态: | Not Qualified | 表面贴装: | YES |
端子形式: | GULL WING | 端子位置: | DUAL |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
NDC631NS62Z | FAIRCHILD |
获取价格 |
Small Signal Field-Effect Transistor, 4.1A I(D), 20V, 1-Element, N-Channel, Silicon, Metal | |
NDC631NX | TI |
获取价格 |
4100mA, 20V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET | |
NDC632 | FAIRCHILD |
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P-Channel Logic Level Enhancement Mode Field Effect Transistor | |
NDC632P | FAIRCHILD |
获取价格 |
P-Channel Logic Level Enhancement Mode Field Effect Transistor | |
NDC632P/D87Z | TI |
获取价格 |
2700mA, 20V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET | |
NDC632P/L99Z | TI |
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2700mA, 20V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET | |
NDC632P/S62Z | TI |
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2700mA, 20V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET | |
NDC632P_NL | FAIRCHILD |
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Small Signal Field-Effect Transistor, 2.7A I(D), 20V, 1-Element, P-Channel, Silicon, Metal | |
NDC632PD84Z | FAIRCHILD |
获取价格 |
Small Signal Field-Effect Transistor, 2.7A I(D), 20V, 1-Element, P-Channel, Silicon, Metal | |
NDC632PD87Z | FAIRCHILD |
获取价格 |
Small Signal Field-Effect Transistor, 2.7A I(D), 20V, 1-Element, P-Channel, Silicon, Metal |