Datasheet > NDC25170A

NDC25170A

更新时间： 2024-10-27 11:15:15

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
6页	196K
描述
Silicon Carbide (SiC) Schottky Diode – EliteSiC, 25 A, 1700 V, Die

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

NDC25170A 数据手册

DIE DATA SHEET

www.onsemi.com

Silicon Carbide (SiC)

Schottky Diode – EliteSiC,

25 A, 1700 V, D1, Die

1. Cathode

2. Anode

Schottky Diode

NDC25170A

Description

Silicon Carbide (SiC) Schottky Diodes use a completely new

technology that provides superior switching performance and higher

reliability compared to Silicon. No reverse recovery current,

temperature independent switching characteristics, and excellent

thermal performance sets Silicon Carbide as the next generation of

power semiconductor. System benefits include highest efficiency,

faster operating frequency, increased power density, reduced EMI, and

reduced system size and cost.

Anode

Features

CROSS SECTION

 Max Junction Temperature 175C

 Avalanche Rated 506 mJ

 High Surge Current Capacity

 Positive Temperature Coefficient

 Ease of Paralleling

 No Reverse Recovery / No Forward Recovery

Applications

 Industrial Motor Loads, Wind Generation Inverter, Solar Inverter,

UPS

 Power Switching Circuits

Die Information

 Wafer Diameter: 6 inch

 Die Size: 4000 x 4000 mm

(include Scribe Lane)

 Metallization:

 Top: Ti/TiN/AlSiCu

 Back: Ti/NiV/Ag

 Die Thickness: Typ. 200 mm

 Bonding Pad Size:

ORDERING INFORMATION

See detailed ordering and shipping information on page 3 of

this data sheet.

 Anode: 3324 x 3324 mm

 Recommended Wire Bond (Note 1)

 Anode: 20 mil x 3

NOTE:

1. Based on TO−247 package

 Semiconductor Components Industries, LLC, 2020

Publication Order Number:

January, 2023 − Rev. 2

NDC25170A/D

12 3 4 5 6

中文翻译

下载PDF

与NDC25170A相关器件

型号	品牌	获取价格	描述	数据表
NDC631N	FAIRCHILD	获取价格	N-Channel Logic Level Enhancement Mode Field Effect Transistor
NDC631N/D87Z	TI	获取价格	4100mA, 20V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
NDC631N/S62Z	TI	获取价格	4100mA, 20V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
NDC631N_NL	FAIRCHILD	获取价格	Small Signal Field-Effect Transistor, 4.1A I(D), 20V, 1-Element, N-Channel, Silicon, Metal
NDC631ND84Z	FAIRCHILD	获取价格	Small Signal Field-Effect Transistor, 4.1A I(D), 20V, 1-Element, N-Channel, Silicon, Metal
NDC631NL99Z	FAIRCHILD	获取价格	Small Signal Field-Effect Transistor, 4.1A I(D), 20V, 1-Element, N-Channel, Silicon, Metal
NDC631NS62Z	FAIRCHILD	获取价格	Small Signal Field-Effect Transistor, 4.1A I(D), 20V, 1-Element, N-Channel, Silicon, Metal
NDC631NX	TI	获取价格	4100mA, 20V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
NDC632	FAIRCHILD	获取价格	P-Channel Logic Level Enhancement Mode Field Effect Transistor
NDC632P	FAIRCHILD	获取价格	P-Channel Logic Level Enhancement Mode Field Effect Transistor