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NDBA180N10BT4H

更新时间: 2024-10-27 01:17:23
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
6页 727K
描述
N-Channel Power MOSFET

NDBA180N10BT4H 数据手册

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NDBA180N10B  
Power MOSFET  
100V, 2.8m, 180A, N-Channel  
www.onsemi.com  
V
R
(on) Max  
I
DSS  
DS  
D Max  
180A  
Features  
Ultra Low On-Resistance  
Low Gate Charge  
2.8m@ 15V  
3.3m@ 10V  
100V  
High Speed Switching  
100% Avalanche Tested  
Pb-Free, Halogen Free and RoHS Compliance  
Electrical Connection  
N-Channel  
Specifications  
2,4  
Absolute Maximum Ratings at Ta = 25°C  
Parameter  
Symbol  
Value  
Unit  
V
Drain to Source Voltage  
V
DSS  
100  
20  
1 : Gate  
Gate to Source Voltage  
V
GSS  
V
2 : Drain  
3 : Source  
4 : Drain  
1
Drain Current (DC)  
I
I
180  
100  
A
D
Drain Current (DC) Limited by Package  
A
DL  
DP  
Drain Current (Pulse)  
PW10μs, duty cycle1%  
Power Dissipation  
Tc=25°C  
3
I
600  
A
P
200  
175  
W
D
Marking  
Junction Temperature  
Tj  
°C  
°C  
A
Storage Temperature  
Tstg  
55 to +175  
100  
Source Current (Body Diode)  
Avalanche Energy (Single Pulse) *1  
I
S
E
451  
mJ  
AS  
Lead Temperature for Soldering  
T
L
260  
°C  
Purposes, 3mm from Case for 10 Seconds  
Thermal Resistance Ratings  
Parameter  
Packing Type:TL  
Symbol  
Value  
0.75  
Unit  
Junction to Case Steady State  
Junction to Ambient *2  
R
θJC  
°C/W  
R
θJA  
62.5  
Note : *1 V  
=48V, L=100μH, I =70A (Fig.1)  
AV  
DD  
*2 Surface mounted on FR4 board using recommended footprint  
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed,  
damage may occur and reliability may be affected.  
ORDERING INFORMATION  
See detailed ordering and shipping information on page 6 of this data sheet.  
© Semiconductor Components Industries, LLC, 2015  
March 2015 - Rev. 3  
1
Publication Order Number :  
NDBA180N10B/D  

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