Datasheet > NDBA180N10BT4H

NDBA180N10BT4H

更新时间： 2024-10-27 01:17:23

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
6页	727K
描述
N-Channel Power MOSFET

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数据手册

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NDBA180N10BT4H 数据手册

NDBA180N10B

Power MOSFET

100V, 2.8mΩ, 180A, N-Channel

www.onsemi.com

(on) Max

DSS

D Max

180A

Features

• Ultra Low On-Resistance

• Low Gate Charge

2.8mΩ@ 15V

3.3mΩ@ 10V

100V

• High Speed Switching

• 100% Avalanche Tested

• Pb-Free, Halogen Free and RoHS Compliance

Electrical Connection

N-Channel

Specifications

2,4

Absolute Maximum Ratings at Ta = 25°C

Parameter

Symbol

Value

Unit

Drain to Source Voltage

DSS

100

1 : Gate

Gate to Source Voltage

GSS

2 : Drain

3 : Source

4 : Drain

Drain Current (DC)

180

100

Drain Current (DC) Limited by Package

Drain Current (Pulse)

PW≤10μs, duty cycle≤1%

Power Dissipation

Tc=25°C

600

200

175

Marking

Junction Temperature

°C

Storage Temperature

Tstg

−55 to +175

100

Source Current (Body Diode)

Avalanche Energy (Single Pulse) *¹

451

Lead Temperature for Soldering

260

°C

Purposes, 3mm from Case for 10 Seconds

Thermal Resistance Ratings

Parameter

Packing Type:TL

Symbol

Value

0.75

Unit

Junction to Case Steady State

Junction to Ambient *²

θJC

°C/W

θJA

62.5

Note : *¹V

=48V, L=100μH, I =70A (Fig.1)

*²Surface mounted on FR4 board using recommended footprint

Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed,

damage may occur and reliability may be affected.

ORDERING INFORMATION

See detailed ordering and shipping information on page 6 of this data sheet.

March 2015 - Rev. 3

Publication Order Number :

NDBA180N10B/D

12 3 4 5 6

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