5秒后页面跳转
NDC PDF预览

NDC

更新时间: 2024-11-20 05:52:03
品牌 Logo 应用领域
CALMIRCO /
页数 文件大小 规格书
1页 86K
描述
ISOLATED RESISTOR NETWORK

NDC 数据手册

  
CALIFORNIA MICRO DEVICES  
NDC  
ISOLATED RESISTOR NETWORK  
California Micro Devices’ resistor arrays are the hybrid equivalent to the isolated resistor networks available in surface  
mount packages. The resistors are spaced on ten mil centers resulting in reduced real estate. These chips are  
manufactured using advanced thin film processing techniques and are 100% electrically tested and visually inspected.  
E LE C TR IC A L S P E C IF IC A TIO N S  
Param eter  
Test Condition  
± 100ppm/°C  
TCR  
-55°C to + 125°  
Max  
Max  
Max  
Max  
Max  
Max  
Max  
Max  
Max  
Max  
Min  
Operating Voltage  
Power Rating (per resistor)  
Thermal Shock  
-55°C to + 125°  
5 0 Vd c  
@ 70°C (Derate linearly to zero @ 150°C)  
Method 107 MIL-STD-202F  
100 Hrs @ 150°C Ambient  
Method 106 MIL-STD-202F  
50mw  
± 0.25%@R  
± 0.25%R  
± 0.5%R  
High Temperature Exposure  
Moisture Resistance  
Life  
Method 108 MIL-STD-202F (125°C/1000hr) ± 0.5%R  
Method 308 MIL-STD-202F  
-35 dB  
-30 dB  
0.25%  
Noise  
250kΩ  
MIL-R-83401  
@25°C  
Short Time Overload  
Insulation Resistance  
1 X 1012  
90  
VA LU E S  
8 resistors from 100to 346Ω  
R1  
R2 R3 R4  
R5 R6  
R7 R8  
60  
M E C H A N IC A L S P E C IF IC A TIO N S  
Substrate  
Silicon 10± 2 mils thick  
Isolation Layer  
Backing  
Metalization  
SiO2 10,000Å thick, min  
Lapped (gold optional)  
Aluminum 10,000Å thick, min  
(15,000Å gold optional)  
Silicon nitride  
Formats  
Passivation  
Die Size: 90±3 x 60±3 mils  
Bonding Pads: 5x7 mils typical  
P A C K A G IN G  
Two inch square trays of 196 chips maximum.  
N O TE S  
1. Resistor pattern may vary from one value to another.  
P A R T N U M B E R D E S IG N A TIO N  
N
CC  
Series Value  
First 3 digits  
5003  
F
A
TCR  
G
W
Backing  
W = Gold  
P
Tolerance  
Bond Pads  
Ratio Tolerance  
No Letter= ± 1%  
P = ± 0.5%  
D = ± 0.5% No Letter = ± 100ppm G = Gold  
are  
F = ± 1%  
G = ± 2%  
J = ± 5%  
K= ± 10%  
M = ± 20%  
A = ± 50%  
B = ± 25%  
No Letter= Aluminum L = Lapped  
No Letter= Either  
significant  
value. Last  
digit  
represents  
number of  
zeroes. R  
indicates  
decimal point.  
C0820400  
© 2000 California Micro Devices Corp. All rights reserved.  
4/00  
215 Topaz Street, Milpitas, California 95035  
Tel: (408) 263-3214  
Fax: (408) 263-7846  
www.calmicro.com  
1

与NDC相关器件

型号 品牌 获取价格 描述 数据表
NDC_NGA_5 MURATA

获取价格

Non-Isolated Wide Input DC/DC Converters
NDC_NNL05_3 MURATA

获取价格

Non-Isolated DC/DC Converters
NDC100170A ONSEMI

获取价格

Silicon Carbide (SiC) Schottky Diode – EliteS
NDC10170A ONSEMI

获取价格

Silicon Carbide (SiC) Schottky Diode – EliteS
NDC25170A ONSEMI

获取价格

Silicon Carbide (SiC) Schottky Diode – EliteS
NDC631N FAIRCHILD

获取价格

N-Channel Logic Level Enhancement Mode Field Effect Transistor
NDC631N/D87Z TI

获取价格

4100mA, 20V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
NDC631N/S62Z TI

获取价格

4100mA, 20V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
NDC631N_NL FAIRCHILD

获取价格

Small Signal Field-Effect Transistor, 4.1A I(D), 20V, 1-Element, N-Channel, Silicon, Metal
NDC631ND84Z FAIRCHILD

获取价格

Small Signal Field-Effect Transistor, 4.1A I(D), 20V, 1-Element, N-Channel, Silicon, Metal