生命周期: | Active | 包装说明: | MICROWAVE, X-CXMW-F4 |
Reach Compliance Code: | compliant | HTS代码: | 8541.21.00.95 |
风险等级: | 5.6 | 配置: | SINGLE |
FET 技术: | HIGH ELECTRON MOBILITY | 最大反馈电容 (Crss): | 0.04 pF |
最高频带: | KA BAND | JESD-30 代码: | X-CXMW-F4 |
元件数量: | 1 | 端子数量: | 4 |
工作模式: | DEPLETION MODE | 封装主体材料: | CERAMIC, METAL-SEALED COFIRED |
封装形状: | UNSPECIFIED | 封装形式: | MICROWAVE |
极性/信道类型: | N-CHANNEL | 最小功率增益 (Gp): | 11 dB |
认证状态: | Not Qualified | 表面贴装: | YES |
端子形式: | FLAT | 端子位置: | UNSPECIFIED |
晶体管应用: | AMPLIFIER | 晶体管元件材料: | GALLIUM ARSENIDE |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
MWT-H773-1 | IXYS |
获取价格 |
RF Small Signal Field-Effect Transistor, 1-Element, KA Band, Gallium Arsenide, N-Channel, | |
MWT-H773-10 | IXYS |
获取价格 |
RF Small Signal Field-Effect Transistor, 1-Element, KA Band, Gallium Arsenide, N-Channel, | |
MWT-H773-11 | IXYS |
获取价格 |
RF Small Signal Field-Effect Transistor, 1-Element, KA Band, Gallium Arsenide, N-Channel, | |
MWT-H773-12 | IXYS |
获取价格 |
TRANSISTOR KA BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HEMFET, FET RF Small Signal | |
MWT-H773-14 | IXYS |
获取价格 |
RF Small Signal Field-Effect Transistor, 1-Element, KA Band, Gallium Arsenide, N-Channel, | |
MWT-H773-15 | IXYS |
获取价格 |
TRANSISTOR KA BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HEMFET, FET RF Small Signal | |
MWT-H773-16 | IXYS |
获取价格 |
TRANSISTOR KA BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HEMFET, FET RF Small Signal | |
MWT-H773-17 | IXYS |
获取价格 |
RF Small Signal Field-Effect Transistor, 1-Element, KA Band, Gallium Arsenide, N-Channel, | |
MWT-H773-18 | IXYS |
获取价格 |
RF Small Signal Field-Effect Transistor, 1-Element, KA Band, Gallium Arsenide, N-Channel, | |
MWT-H773-2 | IXYS |
获取价格 |
RF Small Signal Field-Effect Transistor, 1-Element, KA Band, Gallium Arsenide, N-Channel, |