Datasheet > MWI15-12A7

MWI15-12A7

更新时间： 2024-11-18 03:47:51

品牌	Logo	应用领域
IXYS		双极性晶体管
页数	文件大小	规格书
4页	137K
描述
IGBT Modules Sixpack

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

MWI15-12A7 数据手册

MWI 15-12 A7

I_C25

V_CES

V_{CE(sat) typ.}= 2.0 V

= 30 A

= 1200 V

IGBT Modules

Sixpack

Short Circuit SOA Capability

Square RBSOA

Preliminary Data

Features

IGBTs

●

NPT IGBT technology

low saturation voltage

low switching losses

switching frequency up to 30 kHz

square RBSOA, no latch up

high short circuit capability

positive temperature coefficient for

●

Symbol

V_CES

Conditions

Maximum Ratings

●

T_VJ= 25°C to 150°C

1200

●

V_GES

●

I_C25

I_C80

T_C= 25°C

T_C= 80°C

easy parallelling

MOS input, voltage controlled

ultra fast free wheeling diodes

solderable pins for PCB mounting

●

RBSOA

V_GE= 15 V; R_G= 82 W; T_VJ= 125°C

I_CM

µs

●

Clamped inductive load; L = 100 µH

V_CEK£ V_CES

●

package with copper base plate

t_SC

(SCSOA)

V_CE= V_CES; V_GE= 15 V; R_G= 82 W; T_VJ= 125°C

non-repetitive

Advantages

P_tot

T_C= 25°C

140

●

space savings

reduced protection circuits

package designed for wave soldering

●

Symbol

Conditions

Characteristic Values

(T_VJ= 25°C, unless otherwise specified)

min.

typ. max.

Typical Applications

V_CE(sat)

I_C= 15 A; V_GE= 15 V; T_VJ= 25°C

T_VJ= 125°C

2.0

2.3

2.6

●

AC motor control

●

AC servo and robot drives

power supplies

V_GE(th)

I_CES

I_C= 0.6 mA; V_GE= V_CE

4.5

6.5

●

V_CE= V_CES;V_GE= 0 V; T_VJ= 25°C

T_VJ= 125°C

0.9 mA

0.8

I_GES

V_CE= 0 V; V_GE

20 V

200 nA

t_d(on)

t_r

t_d(off)

t_f

E_on

E_off

100

500

2.3

1.8

Inductive load, T_VJ= 125°C

V_CE= 600 V; I_C= 15 A

V_GE= 15 V; R_G= 82 W

C_ies

Q_Gon

V_CE= 25 V; V_GE= 0 V; f = 1 MHz

V_CE= 600V; V_GE= 15 V; I_C= 15 A

1000

R_thJC

(per IGBT)

0.88 K/W

IXYS reserves the right to change limits, test conditions and dimensions.

1 - 4

12 3 4

中文翻译

下载PDF

与MWI15-12A7相关器件

型号	品牌	获取价格	描述	数据表
MWI15-12A7T	LITTELFUSE	获取价格	Insulated Gate Bipolar Transistor,
MWI15-12T6K	LITTELFUSE	获取价格	Insulated Gate Bipolar Transistor,
MWI200-06A8	IXYS	获取价格	IGBT Modules
MWI225-12E9	IXYS	获取价格	Insulated Gate Bipolar Transistor, 355A I(C), 1200V V(BR)CES, N-Channel, MODULE-29
MWI225-17E9	LITTELFUSE	获取价格	Insulated Gate Bipolar Transistor, 335A I(C), 1700V V(BR)CES, N-Channel, MODULE-29
MWI225-17E9	IXYS	获取价格	Insulated Gate Bipolar Transistor, 335A I(C), 1700V V(BR)CES, N-Channel, MODULE-29
MWI25-12A7	IXYS	获取价格	IGBT Modules Sixpack
MWI25-12A7	LITTELFUSE	获取价格	Insulated Gate Bipolar Transistor, 50A I(C), 1200V V(BR)CES, N-Channel, E2-PACK, SIXPACK-2
MWI25-12A7T	IXYS	获取价格	IGBT Modules Sixpack
MWI25-12A7T	LITTELFUSE	获取价格	Insulated Gate Bipolar Transistor, 50A I(C), 1200V V(BR)CES, N-Channel, E2-PACK, SIXPACK-2