是否无铅: | 不含铅 | 生命周期: | Transferred |
包装说明: | FLANGE MOUNT, R-XUFM-X19 | 针数: | 19 |
Reach Compliance Code: | unknown | 风险等级: | 5.71 |
其他特性: | UL RECOGNIZED | 外壳连接: | ISOLATED |
最大集电极电流 (IC): | 225 A | 集电极-发射极最大电压: | 600 V |
配置: | BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE | 门极-发射极最大电压: | 20 V |
JESD-30 代码: | R-XUFM-X19 | JESD-609代码: | e3 |
元件数量: | 6 | 端子数量: | 19 |
最高工作温度: | 125 °C | 封装主体材料: | UNSPECIFIED |
封装形状: | RECTANGULAR | 封装形式: | FLANGE MOUNT |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性/信道类型: | N-CHANNEL |
最大功率耗散 (Abs): | 675 W | 认证状态: | Not Qualified |
子类别: | Insulated Gate BIP Transistors | 表面贴装: | NO |
端子面层: | Matte Tin (Sn) - with Nickel (Ni) barrier | 端子形式: | UNSPECIFIED |
端子位置: | UPPER | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管应用: | POWER CONTROL | 晶体管元件材料: | SILICON |
标称断开时间 (toff): | 340 ns | 标称接通时间 (ton): | 230 ns |
VCEsat-Max: | 2.5 V | Base Number Matches: | 1 |
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MWI150-06A8 | IXYS |
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