是否Rohs认证: | 符合 | 生命周期: | End Of Life |
包装说明: | FLANGE MOUNT, R-XUFM-X19 | Reach Compliance Code: | compliant |
风险等级: | 5.73 | 其他特性: | UL RECOGNIZED |
外壳连接: | ISOLATED | 最大集电极电流 (IC): | 225 A |
集电极-发射极最大电压: | 600 V | 配置: | BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE |
门极-发射极最大电压: | 20 V | JESD-30 代码: | R-XUFM-X19 |
JESD-609代码: | e3 | 元件数量: | 6 |
端子数量: | 19 | 最高工作温度: | 125 °C |
封装主体材料: | UNSPECIFIED | 封装形状: | RECTANGULAR |
封装形式: | FLANGE MOUNT | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | N-CHANNEL | 最大功率耗散 (Abs): | 675 W |
认证状态: | Not Qualified | 子类别: | Insulated Gate BIP Transistors |
表面贴装: | NO | 端子面层: | Matte Tin (Sn) - with Nickel (Ni) barrier |
端子形式: | UNSPECIFIED | 端子位置: | UPPER |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管应用: | POWER CONTROL |
晶体管元件材料: | SILICON | 标称断开时间 (toff): | 340 ns |
标称接通时间 (ton): | 230 ns | VCEsat-Max: | 2.5 V |
Base Number Matches: | 1 |
型号 | 品牌 | 替代类型 | 描述 | 数据表 |
MWI150-06A8 | IXYS |
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