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MWI225-17E9 PDF预览

MWI225-17E9

更新时间: 2024-02-05 06:56:37
品牌 Logo 应用领域
IXYS 局域网功率控制晶体管
页数 文件大小 规格书
3页 139K
描述
Insulated Gate Bipolar Transistor, 335A I(C), 1700V V(BR)CES, N-Channel, MODULE-29

MWI225-17E9 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:FLANGE MOUNT, R-XUFM-X17Reach Compliance Code:compliant
风险等级:5.73其他特性:UL REGONIZED
外壳连接:ISOLATED最大集电极电流 (IC):335 A
集电极-发射极最大电压:1700 V配置:3 BANKS, SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR
门极-发射极最大电压:20 VJESD-30 代码:R-XUFM-X17
JESD-609代码:e3元件数量:6
端子数量:17最高工作温度:125 °C
封装主体材料:UNSPECIFIED封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):1400 W
认证状态:Not Qualified子类别:Insulated Gate BIP Transistors
表面贴装:NO端子面层:Matte Tin (Sn) - with Nickel (Ni) barrier
端子形式:UNSPECIFIED端子位置:UPPER
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:POWER CONTROL
晶体管元件材料:SILICON标称断开时间 (toff):610 ns
标称接通时间 (ton):290 nsVCEsat-Max:2.9 V
Base Number Matches:1

MWI225-17E9 数据手册

 浏览型号MWI225-17E9的Datasheet PDF文件第2页浏览型号MWI225-17E9的Datasheet PDF文件第3页 
Advanced Technical Information  
MWI 225-17E9  
IC80  
VCES  
VCE(sat)typ. = 2.5 V  
= 235 A  
= 1700 V  
IGBTModules  
Sixpack  
NPT3 IGBT  
2
4
6
15  
20  
25  
28  
29  
16  
17  
21  
22  
26  
27  
11/12  
9/10  
7/8  
13  
14  
18  
19  
23  
24  
E72873  
See outline drawing for pin arrangement  
1
3
5
Features  
IGBTs  
NPT3 IGBT technology  
low saturation voltage  
low switching losses  
square RBSOA, no latch up  
high short circuit capability  
positive temperature coefficient for  
easy parallelling  
MOS input, voltage controlled  
ultra fast free wheeling diodes  
solderable pins for PCB mounting  
package with copper base plate  
Symbol  
VCES  
Conditions  
Maximum Ratings  
TVJ = 25°C to 125°C  
1700  
20  
V
V
VGES  
IC25  
IC80  
TC = 25°C  
TC = 80°C  
335  
235  
A
A
RBSOA  
R = 5 Ω; TVJ = 125°C  
ICM  
=
470  
A
ClGamped inductive load; L = 100 µH  
VCEK VCES  
tSC  
(SCSOA)  
VCE = 1200 V; VGE = 15 V; RG = 5 Ω;  
TVJ = 125°C; non-repetitive; VCEmax < VCES  
10  
µs  
Advantages  
space savings  
reduced protection circuits  
package designed for wave soldering  
Ptot  
TC = 25°C  
1.4  
kW  
Symbol  
Conditions  
Characteristic Values  
Typical Applications  
(TVJ = 25°C, unless otherwise specified)  
min.  
typ. max.  
AC motor control  
AC servo and robot drives  
power supplies  
VCE(sat)  
IC = 225 A; VGE = 15 V; TVJ = 25°C  
TVJ = 125°C  
2.5  
2.9  
2.9  
3.4  
V
V
VGE(th)  
ICES  
IC = 20 mA; VGE = VCE  
4.5  
6.5  
V
VCE = VCES;VGE = 0 V; TVJ = 25°C  
TVJ = 125°C  
0.6 mA  
mA  
4.4  
IGES  
VCE = 0 V; VGE  
=
20 V  
500 nA  
td(on)  
tr  
td(off)  
tf  
Eon  
Eoff  
180  
110  
500  
110  
66  
ns  
ns  
ns  
ns  
mJ  
mJ  
Inductive load, TVJ = 125°C  
VCE = 900 V; IC = 200 A  
VGE = 15 V; RG = 5 Ω  
54  
Cies  
QGon  
VCE = 25 V; VGE = 0 V; f = 1 MHz  
VCE = 700 V; VGE = 15 V; IC = 200 A  
22  
1.72  
nF  
µC  
RthJC  
0.085 K/W  
IXYS reserves the right to change limits, test conditions and dimensions.  
© 2004 IXYS All rights reserved  
1 - 3  

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